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We study the doping evolution of the electronic structure in the normal phase of high-$T_c$ cuprates. Electronic structure and Fermi surface of cuprates with single CuO$_2$ layer in the unit cell like La$_{2-x}$Sr$_x$CuO$_4$ have been calculated by the LDA+GTB method in the regime of strong electron correlations (SEC) and compared to ARPES and quantum oscillations data. We have found two critical concentrations, $x_{c1}$ and $x_{c2}$, where the Fermi surface topology changes. Following I.M. Lifshitz ideas of the quantum phase transitions (QPT) of the 2.5-order we discuss the concentration dependence of the low temperature thermodynamics. The behavior of the electronic specific heat $delta(C/T) sim (x - x_c)^{1/2}$ is similar to the Loram and Cooper experimental data in the vicinity of $x_{c1} approx 0.15$.
Conventional, thermally-driven continuous phase transitions are described by universal critical behaviour that is independent of the specific microscopic details of a material. However, many current studies focus on materials that exhibit quantum-dri
We report measurements of the Seebeck effect in both the $ab$ plane ($S_{rm a}$) and along the $c$ axis ($S_{rm c}$) of the cuprate superconductor La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_4$ (Nd-LSCO), performed in magnetic fields large enough to suppress
Topological insulators and topological superconductors display various topological phases that are characterized by different Chern numbers or by gapless edge states. In this work we show that various quantum information methods such as the von Neuma
Recent STM measurements have observed many inhomogeneous patterns of the local density of states on the surface of high-T_c cuprates. As a first step to study such disordered strong correlated systems, we use the BdG equation for the t-t-t-J model wi
Extensive Cu-NMR studies on multilayered high-Tc cuprates have deduced the following results;(1) Antiferromagnetic (AFM) moment M_{AFM} is decreased with doping, regardless of the number of CuO_2 layers n, and collapses around a carrier density N_h =