ترغب بنشر مسار تعليمي؟ اضغط هنا

Plateau insulator transition in graphene

153   0   0.0 ( 0 )
 نشر من قبل Mario Amado
 تاريخ النشر 2009
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ u=-2$ to $ u=0$. The value of the universal scaling exponent is found to be $kappa=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $kappa$ is in agreement with the accepted universal value for the plateau-insulator transitions in standard quasi two-dimensional electron and hole gases.



قيم البحث

اقرأ أيضاً

Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resis tance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi Liquid behaviour and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.
The temperature dependence of the magneto-conductivity in graphene shows that the widths of the longitudinal conductivity peaks, for the N=1 Landau level of electrons and holes, display a power-law behavior following $Delta u propto T^{kappa}$ with a scaling exponent $kappa = 0.37pm0.05$. Similarly the maximum derivative of the quantum Hall plateau transitions $(dsigma_{xy}/d u)^{max}$ scales as $T^{-kappa}$ with a scaling exponent $kappa = 0.41pm0.04$ for both the first and second electron and hole Landau level. These results confirm the universality of a critical scaling exponent. In the zeroth Landau level, however, the width and derivative are essentially temperature independent, which we explain by a temperature independent intrinsic length that obscures the expected universal scaling behavior of the zeroth Landau level.
136 - Y. Li , M. Amado , T. Hyart 2019
In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. H ere, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. From nonlocal transport measurements, we demonstrate an induced magnetic exchange field in graphene, which lowers the magnetic field required to modulate the magnetic state in graphene. These results show that a magnetic proximity effect in graphene is an important ingredient for the development of two-dimensional materials in which it is desirable for ordered states of matter to be tunable with relatively small applied magnetic fields (> 6 T).
The intrinsic antiferromagnetic topological insulator MnBi2Te4 provides an ideal platform for exploring exotic topological quantum phenomena. Recently, the Chern insulator and axion insulator phases have been realized in few-layer MnBi2Te4 devices at low magnetic field regime. However, the fate of MnBi2Te4 in high magnetic field has never been explored in experiment. In this work, we report transport studies of exfoliated MnBi2Te4 flakes in pulsed magnetic fields up to 61.5 T. In the high-field limit, the Chern insulator phase with Chern number C = -1 evolves into a robust zero Hall resistance plateau state. Nonlocal transport measurements and theoretical calculations demonstrate that the charge transport in the zero Hall plateau state is conducted by two counter-propagating edge states that arise from the combined effects of Landau levels and large Zeeman effect in strong magnetic fields. Our result demonstrates the intricate interplay among intrinsic magnetic order, external magnetic field, and nontrivial band topology in MnBi2Te4.
We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance rho_{xx} follow an exponential law and we extract a critical exponent kappa= . 55 pm .05 which is slightly different from the established value kappa = .42 pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance sigma_{xx}^* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا