اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدThe role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas
218
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We re-examine the quantum tau_q and transport tau_t scattering lifetimes due to background impurities in two-dimensional systems. We show that the well-known logarithmic divergence in the quantum lifetime is due to the non-physical assumption of an infinitely thick heterostructure, and demonstrate that the existing non-divergent multiple scattering theory can lead to unphysical quantum scattering lifetimes in high quality heterostructures. We derive a non-divergent scattering lifetime for finite thickness structures, which can be used both with lowest order perturbation theory and the multiple scattering theory. We calculate the quantum and transport lifetimes for electrons in generic GaAs-AlGaAs heterostructures, and find that the correct `rule of thumb to distinguish the dominant scattering mechanisms in GaAs heterostructures should be tau_t/tau_q < 10 for background impurities and tau_t/tau_q > 10 for remote impurities. Finally we present the first comparison of theoretical results for tau_q and tau_t with experimental data from a GaAs 2DEG in which only background impurity scattering is present. We obtain excellent agreement between the calculations and experimental data, and are able to extract the background impurity density in both the GaAs and AlGaAs regions.
قيم البحث
اقرأ أيضاً
How does an initially homogeneous spin-polarization in a confined two-dimensional electron gas with Rashba spin-orbit coupling evolve in time? How does the relaxation time depend on system size? We study these questions for systems of a size that is
much larger than the Fermi wavelength, but comparable and even shorter than the spin relaxation length. Depending on the confinement spin-relaxation may become faster or slower than in the bulk. An initially homogeneously polarized spin system evolves into a spiral pattern.
Using time-resolved Faraday rotation, the drift-induced spin-orbit Field of a two-dimensional electron gas in an InGaAs quantum well is measured. Including measurements of the electron mobility, the Dresselhaus and Rashba coefficients are determined
as a function of temperature between 10 and 80 K. By comparing the relative size of these terms with a measured in-plane anisotropy of the spin dephasing rate, the Dyakonv-Perel contribution to spin dephasing is estimated. The measured dephasing rate is significantly larger than this, which can only partially be explained by an inhomogeneous g-factor.
The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the systems level of disorder. How
ever, this proposition seems to break down in field-effect transistors involving SrTiO$_3$ (STO) based two-dimensional electron gases. Such peculiar behavior is associated with the electron trapping under an external electric field. However, the microscopic nature of trapping centers remains an open question. In this paper, we investigate electric field-induced charge trapping/detrapping phenomena at the conducting interface between band insulators $gamma$-Al$_2$O$_3$ and STO. Our transport measurements reveal that the charge trapping under +ve back gate voltage ($V_g$) above the tetragonal to cubic structural transition temperature ($T_c$) of STO is contributed by the electric field-assisted thermal escape of electrons from the quantum well, and the clustering of oxygen vacancies (OVs) as well. We observe an additional source of trapping below the $T_c$, which arises from the trapping of free carriers at the ferroelastic twin walls of STO. Application of -ve $V_g$ results in a charge detrapping, which vanishes above $T_c$ also. This feature demonstrates the crucial role of structural domain walls in the electrical transport properties of STO based heterostructures. The number of trapped (detrapped) charges at (from) the twin wall is controlled by the net polarity of the wall and is completely reversible with the sweep of $V_g$.
We investigated the spin dynamics of two-dimensional electrons in (001) GaAs/AlGaAs heterostructure using the time resolved Kerr rotation technique under a transverse magnetic field. The in-plane spin lifetime is found to be anisotropic below 150k du
e to the interference of Rashba and Dresselhaus spin-orbit coupling and Dyakonov-Perel spin relaxation. The ratio of in-plane spin lifetimes is measured directly as a function of temperature and pump power, showing that the electron density in 2DEG channel strongly affects the Rashba spin-orbit coupling.
We study the decoherence and relaxation of a single elementary electronic excitation propagating in a one-dimensional chiral conductor. Using two-particle interferences in the electronic analog of the Hong-Ou-Mandel experiment, we analyze quantitativ
ely the decoherence scenario of a single electron propagating along a quantum Hall edge channel at filling factor 2. The decoherence results from the emergence of collective neutral excitations induced by Coulomb interaction and leading, in one dimension, to the destruction of the elementary quasiparticle. This study establishes the relevance of electron quantum optics setups to provide stringent tests of strong interaction effects in one-dimensional conductors described by Luttinger liquids paradigm.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
