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Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to which radii the present pixel technology can be used. In order to establish such a limit, pixel sensors of the size of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 6E14 Neq/cm^2 at PSI and with protons up to 5E15 Neq/cm^2. The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7kOhm cm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. The bias dependence of the signal for a wide range of fluences will be presented.
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap
Planar silicon pixel sensors with modified n$^+$-implantation shapes based on the IBL pixel sensor were designed in Dortmund. The sensors with a pixel size of $250,mu$m $times$ $50,mu$m are produced in n$^+$-in-n sensor technology. The charge colle
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap
The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D