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A new quaternary intermetallic borocarbide TmCo2B2C has been synthesized via a rapid-quench of an arc-melted ingot. Elemental and powder-diffraction analyses established its correct stoichiometry and single-phase character. The crystal structure is isomorphous to that of TmNi2B2C(I4/mmm) and is stable over the studied temperature range. Above 7 K, the paramagnetic state follows the modified Curie-Weiss behavior (X=C/(T-theta)+X0 wherein X0=0.008(1) emu/mole and the temperature-dependent term reflecting the paramagnetism of the Tm subsystem: ueff=7.6(2) uB [in agreement with the expected value for a free Tm3+ ion] and theta = -4.5(3) K. Long range ferromagnetic order of the Tm sublattice is observed to develop around ~1 K. No superconductivity is detected in TmCo2B2C down to 20 mK, a feature which is consistent with the general trend in the RCo2B2C series. Finally, the influence of the rapid-quench process on the magnetism (and superconductivity) of TmNi2B2C will be discussed and compared to that of TmCo2B2C.
We report on the high pressure synthesis of BiMn$_7$O$_{12}$, a manganite displaying a quadruple perovskite structure. Structural characterization of single crystal samples shows a distorted and asymmetrical coordination around the Bi atom, due to pr
We report details of single crystal growth of stoichiometric bismuthide PtBi$_2$ whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the $c$-axis. The compound crystallizes in space group P-3 with a hexagonal uni
The doping effect of Sr and transition metals Mn, Fe, Co into the direct-gap semiconductor LaZnAsO has been investigated. Our results indicate that the single phase ZrCuSiAs-type tetragonal crystal structure is preserved in (La1-xSrx)(Zn1-xTMx)AsO (T
We report the structural and magnetic properties of a quantum magnet PbCuTeO5. The triclinic structure of PbCuTeO5 comprises of alternating layers (ab-planes), in which one layer is composed of S = 1/2 dimer chains and another layer is composed of S
The microstructures and interfaces of two-phase vertically aligned nanocomposite (VAN) thin films play a key role in the design of spintronic device architectures and their multifunctional properties. Here, we show how the microstructures in self-ass