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We report exact diagonalization studies of inelastic light scattering in few-electron quantum dots under the strong confinement regime characteristic of self-assembled dots. We apply the orthodox (second-order) theory for scattering due to electronic excitations, leaving for the future the consideration of higher-order effects in the formalism (phonons, for example), which seem relevant in the theoretical description of available experiments. Our numerical results stress the dominance of monopole peaks in Raman spectra and the breakdown of selection rules in open-shell dots. The dependence of these spectra on the number of electrons in the dot and the incident photon energy is explicitly shown. Qualitative comparisons are made with recent experimental results.
Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy con
The radiative recombination rates of interacting electron-hole pairs in a quantum dot are strongly affected by quantum correlations among electrons and holes in the dot. Recent measurements of the biexciton recombination rate in single self-assembled
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots
We report on capacitance-voltage spectroscopy of self-assembled InAs quantum dots under constant illumination. Besides the electronic and excitonic charging peaks in the spectrum reported earlier, we find additional resonances associated with nonequi
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the effect being l