ﻻ يوجد ملخص باللغة العربية
We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphenes transport properties. We discuss the screening of a single Coulomb impurity and the ensemble averaged density profile of graphene in the presence of many randomly distributed impurities. Finally, we discuss graphenes transport properties due to scattering off charged impurities both at low and high carrier density.
We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linea
Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ripples6, 7, or charged impurities2, 3, 8-13 to explain the conductivity as a function of carrier density sigma_(n)[1,14-18], and its
The singular density of states and the two Fermi wavevectors resulting from a ring-shaped or Mexican hat valence band give rise to unique trends in the charged impurity scattering rates and charged impurity limited mobilities. Ring shaped valence ban
We investigate the dynamics of a two-dimensional electron gas (2DEG) under circular polarized microwave radiation in presence of dilute localized impurities. Inspired by recent developments on Floquet topological insulators we obtain the Floquet wave
We develop an Effective Medium Theory to study the electrical transport properties of disordered graphene. The theory includes non-linear screening and exchange-correlation effects allowing us to consider experimentally relevant strengths of the Coul