ﻻ يوجد ملخص باللغة العربية
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in appearance of the strong disorder D band around 1345 1/cm indicating damage to the lattice. The D and G peak evolution with the increasing radiation dose follows the amorphization trajectory, which suggests graphenes transformation to the nanocrystalline, and then to amorphous form. The results have important implications for graphene characterization and device fabrication, which rely on the electron microscopy and focused ion beam processing.
Using X-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy we show that upon keV Xe + irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads
Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed in-situ as
We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight binding model
As impermeable to gas molecules and at the same time transparent to high-energy ions, graphene has been suggested as a window material for separating a high-vacuum ion beam system from targets kept at ambient conditions. However, accumulation of irra
The possibility of utilizing the rich spin-dependent properties of graphene has attracted great attention in pursuit of spintronics advances. The promise of high-speed and low-energy consumption devices motivates a search for layered structures that