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We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed in-situ room temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs.
The impact of 400 keV $Ar^+$ ion irradiation on the magnetic and electrical properties of in-plane magnetized magnetic tunnel junction (MTJ) stacks was investigated by ferromagnetic resonance, vibrating sample magnetometry and current-in-plane tunnel
Investigations of the complex behavior of the magnetization of manganese arsenide thin films due to defects induced by irradiation of slow heavy ions are presented. In addition to the thermal hysteresis suppression already highlighted in M. Trassinel
We have studied the influence of alloying copper with amorphous arsenic sulfide on the electronic properties of this material. In our computer-generated models, copper is found in two-fold near-linear and four-fold square-planar configurations, which
When a liquid is cooled below its melting temperature it usually crystallizes. However, if the quenching rate is fast enough, it is possible that the system remains in a disordered state, progressively losing its fluidity upon further cooling. When t
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in appearance