اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدLifetime of the superconductive state in short and long Josephson junctions
144
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We study the transient statistical properties of short and long Josephson junctions under the influence of thermal and correlated fluctuations. In particular, we investigate the lifetime of the superconductive metastable state finding the presence of noise induced phenomena. For short Josephson junctions we investigate the lifetime as a function both of the frequency of the current driving signal and the noise intensity and we find how these noise-induced effects are modified by the presence of a correlated noise source. For long Josephson junctions we integrate numerically the sine-Gordon equation calculating the lifetime as a function of the length of the junction both for inhomogeneous and homogeneous bias current distributions. We obtain a nonmonotonic behavior of the lifetime as a function of the frequency of the current driving signal and the correlation time of the noise. Moreover we find two maxima in the nonmonotonic behaviour of the mean escape time as a function of the correlated noise intensity.
قيم البحث
اقرأ أيضاً
The computer simulations of fluctuational dynamics of the long overlap Josephson junction in the frame of the sine-Gordon model with a white noise source have been performed. It has been demonstrated that for the case of constant critical current den
sity the mean life time (MLT) of superconductive state increases with increasing the junctions length and for homogeneous bias current distribution MLT tends to a constant, while for inhomogeneous current distribution MLT quickly decreases after approaching of a few Josephson lengths. The mean voltage versus junction length behaves inversely in comparison with MLT.
We consider a fractional Josephson vortex in a long 0-kappa Josephson junction. A uniformly applied bias current exerts a Lorentz force on the vortex. If the bias current exceeds the critical current, an integer fluxon is torn off the kappa-vortex an
d the junction switches to the voltage state. In the presence of thermal fluctuations the escape process takes place with finite probability already at subcritical values of the bias current. We experimentally investigate the thermally induced escape of a fractional vortex by high resolution measurements of the critical current as a function of the topological charge kappa of the vortex and compare the results to numerical simulations for finite junction lengths and to theoretical predictions for infinite junction lengths. To study the effect caused by the junction geometry we compare the vortex escape in annular and linear junctions.
We propose, implement and test experimentally long Josephson 0-pi junctions fabricated using conventional Nb-AlOx-Nb technology. We show that using a pair of current injectors, one can create an arbitrary discontinuity of the Josephson phase and in p
articular a pi-discontinuity, just like in d-wave/s-wave or in d-wave/d-wave junctions, and study fractional Josephson vortices which spontaneously appear. Moreover, using such junctions, we can investigate the emph{dynamics} of the fractional vortices -- a domain which is not yet available for natural 0-pi-junctions due to their inherently high damping. We observe half-integer zero-field steps which appear on the current-voltage characteristics due to hopping of semifluxons.
The transient dynamics of long overlap Josephson junctions in the frame of the sine-Gordon model with a white noise source is investigated. The effect of noise delayed decay is observed for the case of overdamped sine-Gordon equation. It is shown tha
t this noise induced effect, in the range of small noise intensities, vanishes for junctions lengths greater than several Josephson penetration length.
We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In lo
ng ballistic junctions, $I_S$ is found to scale as $propto exp(-k_bT/delta E)$. The extracted energies $delta E$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $Trightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $delta E$ (or $Delta$) and the number of the junctions transversal modes.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
