ﻻ يوجد ملخص باللغة العربية
We demonstrate that voltage-controlled negative index can be obtained in self-organized InAs quantum dot systems. As the bias voltage changes, the refractive index can be adjusted and controlled continuously from -7 to 7. Simultaneously, the absorption of light in the system will be very small. The single-negative index materials and the double-negative index materials can be achieved in different bias voltages.
The voltage-controlled Berry phases in two vertically coupled InGaAs/GaAs quantum dots are investigated theoretically. It is found that Berry phases can be changed dramatically from 0 to 2$pi$ (or 2$pi$ to 0) only simply by turning the external volta
The ground state of neutral and negatively charged excitons confined to a single self-assembled InGaAs quantum dot is probed in a direct absorption experiment by high resolution laser spectroscopy. We show how the anisotropic electron-hole exchange i
Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron systems. Thi
Two strongly coupled quantum dots are theoretically and experimentally investigated. In the conductance measurements of a GaAs based low-dimensional system additional features to the Coulomb blockade have been detected at low temperatures. These regi
By operating a one-electron quantum dot (fabricated between a multielectron dot and a one-electron reference dot) as a spectroscopic probe, we study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition between odd