اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDoping a Mott insulator with orbital degrees of freedom
156
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in analogy to the one-band supersymmetric t-J model. We use the Bethe ansatz to derive a set of nonlinear integral equations which allow us to study the thermodynamics exactly. Moving away from this special point in parameter space we use the density-matrix renormalization group applied to transfer matrices to study the evolution of various phases of the undoped system with doping and temperature. Finally, we study a one-dimensional version of a realistic model for cubic titanates which includes the anisotropy of the orbital sector due to Hunds coupling. We find a transition from a phase with antiferromagnetically correlated spins to a phase where the spins are fully ferromagnetically polarized, a strong tendency towards phase separation at large Hunds coupling, as well as the possibility of an instability towards triplet superconductivity.
قيم البحث
اقرأ أيضاً
We consider an interaction-driven scenario for the two-dimensional metal-insulator transition in zero magnetic field (2D-MIT), based on melting the Wigner crystal through vacancy-interstitial pair formation. We show that the transition from the Wigne
r-Mott insulator to a heavy Fermi liquid emerges as an instability to self-doping, resembling conceptually the solid to normal liquid transition in He3. The resulting physical picture naturally explains many puzzling features of the 2D-MIT.
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spe
ctroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to the spectral weight transfer from the charge transfer band to the gapped region and the induced low-energy states emerge in a wide energy range inside the Mott gap. These results provide key information on the electronic evolution in doping a Mott insulator and establish a basis for developing microscopic theories for cuprate superconductivity.
To elucidate the pressure evolution of the electronic structure in an antiferromagnetic dimer-Mott (DM) insulator ${beta}^{prime}$-(BEDT-TTF)$_2$ICl$_2$, which exhibits superconductivity at 14.2 K under 8 GPa, we measured the polarized infrared (IR)
optical spectra under high pressure. At ambient pressure, two characteristic bands due to intra- and interdimer charge transfers have been observed in the IR spectra, supporting that this salt is a typical half-filled DM insulator at ambient pressure. With increasing pressure, however, the intradimer charge transfer excitation shifts to much lower energies, indicating that the effective electronic state changes from half-filled to 3/4-filled as a result of weakening of dimerization. This implies that the system approaches a charge-ordered state under high pressure, in which charge degrees of freedom emerge as an important factor. The present results suggest that charge fluctuation inside of dimers plays an important role in the high-temperature superconductivity.
We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner crystal. Kin
etic energy gained by delocalizing such excitations is found to lead to an instability of the insulator to self-doping above a critical carrier concentration $n=n_c$, mapping the problem to a density-driven Mott MIT. This mechanism provides a natural microscopic picture of several puzzling experimental features, including the large effective mass enhancement, the large resistivity drop, and the large positive magneto-resistance on the metallic side of the transition. We also present a global phase diagram for the clean 2D electron gas as a function of $n$ and parallel magnetic field $B_{shortparallel}$, which agrees well with experimental findings in ultra clean samples.
We consider a boundary between a Mott insulator and a superfluid region of a Bose-Hubbard model at unit filling. Initially both regions are decoupled and cooled to their respective ground states. We show that, after switching on a small tunneling rat
e between both regions, all particles of the Mott region migrate to the superfluid area. This migration takes place whenever the difference between the chemical potentials of both regions is less than the maximal energy of any eigenmode of the superfluid. We verify our results numerically with DMRG simulations and explain them analytically with a master equation approximation, finding good agreement between both approaches. Finally we carry out a feasibility study for the observation of the effect in coupled arrays of micro-cavities and optical lattices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
