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Since spin and charge are both carried by electrons (or holes) in a solid, it is natural to assume that charge and spin diffusion coefficients will be the same. Drift-diffusion models of spin transport typically assume so. Here, we show analytically that the two diffusion coefficients can be vastly different in quantum wires. Although we do not consider quantum wells or bulk systems, it is likely that the two coefficients will be different in those systems as well. Thus, it is important to distinguish between them in transport models, particularly those applied to quantum wire based devices
The spin orbit interaction plays a crucial role in diverse fields of condensed matter, including the investigation of Majorana fermions, topological insulators, quantum information and spintronics. In III V zinc blende semiconductor heterostructures,
Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved imaging reveals
In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as valley. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled independently.
Spin pumping consists in the injection of spin currents into a non-magnetic material due to the precession of an adjacent ferromagnet. In addition to the pumping of spin the precession always leads to pumping of heat, but in the presence of spin-orbi
The fabrication of bismuthene on top of SiC paved the way for substrate engineering of room temperature quantum spin Hall insulators made of group V atoms. We perform large-scale quantum transport calculations in these 2d materials to analyse the ric