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In addition to spin, electrons in many materials possess an additional pseudo-spin degree of freedom known as valley. In materials where the spin and valley degrees of freedom are weakly coupled, they can be both excited and controlled independently. In this work, we study a model describing the interplay of the spin and valley Hall effects in such two-dimensional materials. We demonstrate the emergence of an additional longitudinal neutral current that is both spin and valley polarized. The additional neutral current allows to control the spin density by tuning the magnitude of the valley Hall effect. In addition, the interplay of the two effects can suppress the Hanle effect, that is, the oscillation of the nonlocal resistance of a Hall bar device with in-plane magnetic field. The latter observation provides a possible explanation for the absence of the Hanle effect in a number of recent experiments. Our work opens also the possibility to engineer the conversion between the valley and spin degrees of freedom in two-dimensional materials.
Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved imaging reveals
We have measured spin Hall effects in spin glass metals, CuMnBi alloys, with the spin absorption method in the lateral spin valve structure. Far above the spin glass temperature Tg where the magnetic moments of Mn impurities are randomly frozen, the
We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and relaxatio
We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal wi
In the normal metal/ferromagnetic insulator bilayer (such as Pt/Y$_{3}$Fe$_{5}$O$_{12}$) and the normal metal/ferromagnetic metal/oxide trilayer (such as Pt/Co/AlO$_{x}$) where spin injection and ejection are achieved by the spin Hall effect in the n