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The formation of domains comprising alternating hole rich and hole poor ladders recently observed by Scanning Tunneling Microscopy by Kohsaka et al., on lightly hole doped cuprates, is interpreted in terms of an attractive mechanism which favors the presence of doped holes on Cu sites located each on one side of an oxygen atom. This mechanism leads to a geometrical pattern of alternating hole-rich and hole-poor ladders with a periodicity equal to 4 times the lattice spacing in the CuO plane, as observed experimentally. To cite this article: G. Deutscher, P.-G. de Gennes, C. R. Physique 8 (2007).
The low-energy excitations of the lightly doped cuprates were studied by angle-resolved photoemission spectroscopy. A finite gap was measured over the entire Brillouin zone, including along the d_{x^2 - y^2} nodal line. This effect was observed to be
A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate in the an
We have performed a systematic angle-resolved photoemission study of as-grown and oxygen-reduced Pr$_{2-x}$Ce$_x$CuO$_4$ and Pr$_{1-x}$LaCe$_{x}$CuO$_4$ electron-doped cuprates. In contrast to the common belief, neither the band filling nor the band
We discuss evolution of the Fermi surface (FS) topology with doping in electron doped cuprates within the framework of a one-band Hubbard Hamiltonian, where antiferromagnetism and superconductivity are assumed to coexist in a uniform phase. In the li
Using a dynamical cluster quantum Monte Carlo approximation, we investigate the effect of local disorder on the stability of d-wave superconductivity including the effect of electronic correlations in both particle-particle and particle-hole channels