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We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in the direction of the density modulation is observed, i.e. perpendicular to the applied source-drain voltage. The polarity of the transverse voltage is independent of the polarity of the source-drain voltage, demonstrating rectification in the device. We find that the transverse voltage $U_{y}$ depends quadratically on the applied source-drain voltage and non-monotonically on the density modulation. The experimental results are discussed in the framework of a diffusion thermopower model.
We present thermopower $S$ and resistance $R$ measurements on GaAs-based mesoscopic two-dimensional electron gases (2DEGs) as functions of the electron density $n_s$. At high $n_s$ we observe good agreement between the measured $S$ and $S_{rm{MOTT}}$
We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong asymmetry in the
Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage
We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus d
We present measurements of the energy relaxation length scale $ell$ in two-dimensional electron gases (2DEGs). A temperature gradient is established in the 2DEG by means of a heating current, and then the elevated electron temperature $T_e$ is estima