اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدVoltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
246
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.
قيم البحث
اقرأ أيضاً
Optical control of electronic spins is the basis for ultrafast spintronics: circularly polarized light in combination with spin-orbit coupling of the electronic states allows for spin manipulation in condensed matter. However, the conventional approa
ch is limited to spin orientation along one particular orientation that is dictated by the direction of photon propagation. Plasmonics opens new capabilities, allowing one to tailor the light polarization at the nanoscale. Here, we demonstrate ultrafast optical excitation of electron spin on femtosecond time scales via plasmon to exciton spin conversion. By time-resolving the THz spin dynamics in a hybrid (Cd,Mn)Te quantum well structure covered with a metallic grating, we unambiguously determine the orientation of the photoexcited electron spins which is locked to the propagation direction of surface plasmon-polaritons. Using the spin of the incident photons as additional degree of freedom, one can orient the photoexcited electron spin at will in a two-dimensional plane.
We demonstrate that chiral skyrmionic magnetization configurations can be found as the minimum energy state in B20 thin film materials with easy-plane magnetocrystalline anisotropy with an applied magnetic field perpendicular to the film plane. Our o
bservations contradict results from prior analytical work, but are compatible with recent experimental investigations. The size of the observed skyrmions increases with the easy-plane magnetocrystalline anisotropy. We use a full micromagnetic model including demagnetization and a three-dimensional geometry to find local energy minimum (metastable) magnetization configurations using numerical damped time integration. We explore the phase space of the system and start simulations from a variety of initial magnetization configurations to present a systematic overview of anisotropy and magnetic field parameters for which skyrmions are metastable and global energy minimum (stable) states.
Materials with large magnetocrystalline anisotropy and strong electric field effects are highly needed to develop new types of memory devices based on electric field control of spin orientations. Instead of using modified transition metal films, we p
ropose that certain monolayer transition metal dichalcogenides are the ideal candidate materials for this purpose. Using density functional calculations, we show that they exhibit not only a large magnetocrystalline anisotropy (MCA), but also colossal voltage modulation under external field. Notably, in some materials like CrSe_2 and FeSe_2, where spins show a strong preference for in-plane orientation, they can be switched to out-of-plane direction. This effect is attributed to the large band character alteration that the transition metal d-states undergo around the Fermi energy due to the electric field. We further demonstrate that strain can also greatly change MCA, and can help to improve the modulation efficiency while combined with an electric field.
Frequency dependence of magnetoelectric (ME) coupling is investigated in trilayers of ferromagnetic alloy and piezoelectric lead zirconate titanate (PZT). The ferromagnetic phases studied include permendur, a soft magnet with high magnetostriction, i
ron, nickel, and cobalt. Low frequency data on ME voltage coefficient versus bias magnetic field indicate strong coupling only for trilayers with permendure or Ni. Measurements of frequency dependence of ME voltage reveal a giant ME coupling at electromechanical resonance. The ME interactions for transverse fields is an order of magnitude stronger than for longitudinal fields. The maximum voltage coefficient of 90 V/cm Oe at resonance is measured for samples with nickel or permendure and is three orders of magnitude higher than low-frequency values.
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnet
ic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects stongly affect the domain wall propagation.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
