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High quality single wall carbon nanotube quantum dots have been made showing both metallic and semiconducting behavior. Some of the devices are identified as small band gap semiconducting nanotubes with relatively high broad conductance oscillations for hole transport through the valence band and low conductance Coulomb blockade oscillations for electron transport through the conduction band. The transition between these regimes illustrates that transport evolves from being wave-like transmission known as Fabry-Perot interference to single particle-like tunneling of electrons or holes. In the intermediate regime four Coulomb blockade peaks appear in each Fabry-Perot resonance, which is interpreted as entering the SU(4) Kondo regime. A bias shift of opposite polarity for the Kondo resonances for one electron and one hole in a shell is in some cases observed.
We report the observation of an intriguing behaviour in the transport properties of nanodevices operating in a regime between the Fabry-Perot and the Kondo limits. Using ultra-high quality nanotube devices, we study how the conductance oscillates whe
Two distinct types of magnetoresistance oscillations are observed in two electronic Fabry-Perot interferometers of different sizes in the integer quantum Hall regime. Measuring these oscillations as a function of magnetic field and gate voltages, we
Phase coherence of charge carriers leads to electron-wave interference in ballistic mesoscopic conductors. In graphene, such Fabry-Perot-like interference has been observed, but a detailed analysis has been complicated by the two-dimensional nature o
The connection of electrical leads to wire-like molecules is a logical step in the development of molecular electronics, but also allows studies of fundamental physics. For example, metallic carbon nanotubes are quantum wires that have been found to
We report on shot noise measurements in carbon nanotube based Fabry-Perot electronic interferometers. As a consequence of quantum interferences, the noise power spectral density oscillates as a function of the voltage applied to the gate electrode. T