اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDetermination of spin polarization in InAs/GaAs self-assembled quantum dots
204
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the addition energies. From the magneto-capacitance spectroscopy data, the authors found a fully polarized ensemble of electronic spins above 10 T when $mathbf{B}parallel[001]$ and at 2.8 K. Finally, by including the g-tensor anisotropy the angular dependence of spin polarization with the magnetic field $mathbf{B}$ orientation and strength could be determined.
قيم البحث
اقرأ أيضاً
We investigate the electronic structure of the InAs/InP quantum dots using an atomistic pseudopotential method and compare them to those of the InAs/GaAs QDs. We show that even though the InAs/InP and InAs/GaAs dots have the same dot material, their
electronic structure differ significantly in certain aspects, especially for holes: (i) The hole levels have a much larger energy spacing in the InAs/InP dots than in the InAs/GaAs dots of corresponding size. (ii) Furthermore, in contrast with the InAs/GaAs dots, where the sizeable hole $p$, $d$ intra-shell level splitting smashes the energy level shell structure, the InAs/InP QDs have a well defined energy level shell structure with small $p$, $d$ level splitting, for holes. (iii) The fundamental exciton energies of the InAs/InP dots are calculated to be around 0.8 eV ($sim$ 1.55 $mu$m), about 200 meV lower than those of typical InAs/GaAs QDs, mainly due to the smaller lattice mismatch in the InAs/InP dots. (iii) The widths of the exciton $P$ shell and $D$ shell are much narrower in the InAs/InP dots than in the InAs/GaAs dots. (iv) The InAs/GaAs and InAs/InP dots have a reversed light polarization anisotropy along the [100] and [1$bar{1}$0] directions.
We report on the influence of hyperfine interaction on the optical orientation of singly charged excitons X+ and X- in self-assembled InAs/GaAs quantum dots. All measurements were carried out on individual quantum dots studied by micro-photoluminesce
nce at low temperature. We show that the hyperfine interaction leads to an effective partial spin relaxation, under 50kHz modulated excitation polarization, which becomes however strongly inhibited under steady optical pumping conditions because of dynamical nuclear polarization. This optically created magnetic-like nuclear field can become very strong (up to ~4 T) when it is generated in the direction opposite to a longitudinally applied field, and exhibits then a bistability regime. This effect is very well described by a theoretical model derived in a perturbative approach, which reveals the key role played by the energy cost of an electron spin flip in the total magnetic field. Eventually, we emphasize the similarities and differences between X+ and X- trions with respect to the hyperfine interaction, which turn out to be in perfect agreement with the theoretical description.
We use a many-body, atomistic empirical pseudopotential approach to predict the multi-exciton emission spectrum of a lens shaped InAs/GaAs self-assembled quantum dot. We discuss the effects of (i) The direct Coulomb energies, including the difference
s of electron and hole wavefunctions, (ii) the exchange Coulomb energies and (iii) correlation energies given by a configuration interaction calculation. Emission from the groundstate of the $N$ exciton system to the $N-1$ exciton system involving $e_0to h_0$ and $e_1to h_1$ recombinations are discussed. A comparison with a simpler single-band, effective mass approach is presented.
Using a single-particle atomistic pseudopotential method followed by a many-particle configuration interaction method, we investigate the geometry, electronic structure and optical transitions of a self-assembled InAs/GaAs quantum ring (QR), changing
its shape continously from a lens-shaped quantum dot (QD) to a nearly one dimensional ring. We find that the biaxial strain in the ring is strongly asymmetric in the plane perpendicular to the QR growth direction, leading to giant optical anisotropy.
We investigate exciton spin memory in individual InAs/GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to define the i
nitial spin polarization of neutral excitons. The conservation of the linear polarization generated along the bright exciton eigenaxes of up to 90% and the conversion from circular- to linear polarization of up to 47% both demonstrate a very long spin relaxation time with respect to the radiative lifetime. Results are quantitatively compared with a model of pseudo-spin 1/2 including heavy-to-light hole mixing.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
