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Some possible connection between spin and charge degrees of freedom in magneto-resistive manganites is investigated through a thorough experimental study of the magnetic (AC susceptibility and DC magnetization) and transport (resistivity and thermal conductivity) properties. Measurements are reported in the case of well characterized polycrystalline La_{0.8}Sr_{0.2}MnO_3 samples. The experimental results suggest rather strong field-induced polarization effects in our material, clearly indicating the presence of ordered FM regions inside the semiconducting phase. Using an analytical expression which fits the spontaneous DC magnetization, the temperature and magnetic field dependences of both electrical resistivity and thermal conductivity data are found to be well reproduced through a universal scenario based on two mechanisms: (i) a magnetization dependent spin polaron hopping influenced by a Zeeman splitting effect, and (ii) properly defined thermally excited polaron states which have to be taken into account in order to correctly describe the behavior of the less conducting region. Using the experimentally found values of the magnetic and electron localization temperatures, we obtain L=0.5nm and m_p=3.2m_e for estimates of the localization length (size of the spin polaron) and effective polaron mass, respectively.
$La_{0.7}Ca_{0.3}MnO_3$ samples were prepared in nano- and polycrystalline forms by sol-gel and solid state reaction methods, respectively, and structurally characterized by synchrotron X-ray diffraction. The magnetic properties determined by ac susc
Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth
By using laboratory x-ray photoemission spectroscopy (XPS) and hard x-ray photoemission spectroscopy (HX-PES) at a synchrotron facility, we report an empirical semi-quantitative relationship between the valence/core-level x-ray photoemission spectral
Artificially engineered superlattices were designed and fabricated to induce different growth mechanisms and structural characteristics. DC sputtering was used to grow ferromagnetic (La$_{0.8}$Ba$_{0.2}$MnO$_3$) / ferroelectric (Ba$_{0.25}$Sr$_{0.75}
Large magnetoresistive materials are of immense interest for a number of spintronic applications by developing high density magnetic memory devices, magnetic sensors and magnetic switches. Colossal magnetoresistance, for which resistivity changes sev