اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدEffect of stoichiometry on oxygen incorporation in MgB2 thin films
144
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the materials stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg rich films and in films exposed to humid atmospheres.
قيم البحث
اقرأ أيضاً
Oxygen was systematically incorporated in MBE grown MgB2 films using in-situ post-growth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature and resistivity indicate that oxygen is dist
ributed both within and between the grains. High values of critical current densities in field (~4x10^5 A/cm^2 at 8 T and 4.2 K), extrabolated critical fields (>45 T) and slopes of critical field versus temperature (1.4 T/K) are observed. Our results suggest that low growth temperatures (300oC) and oxygen doping (>0.65%) can produce MgB2 with high Jc values in field and Hc2 for high-field magnet applications.
Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films by annealing in quartz ampoules containing elemental alkali metals at <
350 degree centigrade. No significant change in transition temperature (Tc) was observed, in contrast to an earlier report of very high Tc (>50 K) for similar experiments on MgB2 powders. The lack of a significant change in Tc and intra-granular carrier scattering suggests that Rb and Cs diffuse into the film, but do not enter the grains. Instead, the observed changes in the electrical properties, including a significant drop in Jc and an increase in delta rho (rho300-rho40), arise from a decrease in inter-granular connectivity due to segregation of the heavy alkaline metals and other impurities (i.e. C and O) introduced into the grain boundary regions during the anneals.
We have performed flux noise and AC-susceptibility measurements on two 400 nm thick MgB$_2$ films. Both measurement techniques give information about the vortex dynamics in the sample, and hence the superconducting transition, and can be linked to ea
ch other through the fluctuation-dissipation-theorem. The transition widths for the two films are 0.3 and 0.8 K, respectively, and the transitions show a multi step-like behavior in the AC-susceptibility measurements. The same phenomenon is observed in the flux noise measurements through a change in the frequency dependence of the spectral density at each step in the transition. The results are discussed and interpreted in terms of vortices carrying an arbitrary fraction of a flux quantum as well as in terms of different macroscopic regions in the films having slightly different compositions, and hence, different critical temperatures.
Upper critical fields of four MgB2 thin films were measured up to 28 Tesla at Grenoble High Magnetic Field Laboratory. The films were grown by Pulsed Laser Deposition and showed critical temperatures ranging between 29.5 and 38.8 K and resistivities
at 40 K varying from 5 to 50 mWcm. The critical fields in the perpendicular direction turned out to be in the 13-24 T range while they were estimated to be in 42-57 T the range in ab-planes. In contrast to the prediction of the BCS theory, we did not observe any saturation at low temperatures: a linear temperature dependence is exhibited even at lowest temperatures at which we made the measurements. Moreover, the critical field values seemed not to depend on the normal state resistivity value. In this paper, we analyze these data considering the multiband nature of superconductivity in MgB2 We will show how the scattering mechanisms that determine critical fields and resistivity can be different.
We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The E
B process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
