ﻻ يوجد ملخص باللغة العربية
In a previous paper (Phase Transitions, 80(9), 987, 2007) we discussed the smectic and nematic textures of some mesomorphic oxadiazole compounds with terminal Cl-substituent. Optical microscope investigations showed a very interesting behaviour of smectic and nematic phases; the smectic phase has fan-shaped and toric textures and the nematic phase has spherulitic domains, which disappear as the sample is further heated, the texture changing into a smooth one. Here, we investigate four oxadiazole compounds with the same structure but terminal Br-substituent. The behaviour of the smectic and nematic phases is like that observed in the compounds with Cl. The focus of the paper is on the growth of toric domains from the nematic melt and on the role of defects in the domain structure.
When a family of non symmetrical heterocycled compounds is investigated, a variety of mesophases can be observed with rather different features. Here we report the behaviour of seven different members among a family of such materials, that consists o
Using a generalized Landau theory involving orientational, layering, tilt, and biaxial order parameters we analyze the smectic-A* and smectic-C* (Sm-A* -- Sm-C*) transition, showing that a combination of small orientational order and large layering o
In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the well-known {alpha}-phase ThCr2Si2-type structure (Z=2), a new polymorphic
The novel strain-driven morphotropic phase boundary (MPB) in highly-strained BiFeO3 thin film is featured by ordered mixed phase nanodomains (MPNs). Through scanning probe microscopy and synchrotron X-ray diffraction, eight structural variants of the
Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is j