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The recent development of electric and electronic devices has been remarkable. The miniaturization of electronic devices and high integration are progressing by advances in mounting technology. As a result, the reliability of fatigue life has been prioritized as an important concern, since the thermal expansion difference between a package and printed circuit board causes thermal fatigue. It is demanded a long-life product which has short development time. However, it is difficult because of interaction between each design factor. The authors have investigated the influence of various design factors on the reliability of soldered joints in BGA model by using response surface method and cluster analysis. By using these techniques, the interaction of all design factors was clarified. Based upon the analytical results, design engineers can rate each factors effect on reliability and assess the reliability of their basic design plan at the concept design stage.
As the integration and the miniaturization of electronics devices, design space become narrower and interactions between design factors affect their reliability. This paper presents a methodology of quantifying the interaction of each design factor i
We present TB2J, a Python package for the automatic computation of magnetic interactions, including exchange and Dzyaloshinskii-Moriya interactions, between atoms of magnetic crystals from the results of density functional calculations. The program i
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
Polymeric methyltrioxorhenium (poly-MTO) is the first member of a new class of organometallic hybrids which adopts the structural motives and physical properties of classical perowskites in two dimensions. In this study we demonstrate how the electro
The electronic transport and the sensing performance of an individual SnO2 crossed nanowires device in a three-terminal field effect configuration were investigated using a combination of macroscopic transport measurements and Scanning Surface Potent