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While the intrinsic anomalous Hall conductivity is normally written in terms of an integral of the electronic Berry curvature over the occupied portions of the Brillouin zone, Haldane has recently pointed out that this quantity (or more precisely, its ``non-quantized part) may alternatively be expressed as a Fermi-surface property. Here we present an {it ab-initio} approach for computing the anomalous Hall conductivity that takes advantage of this observation by converting the integral over the Fermi sea into a more efficient integral on the Fermi surface only. First, a conventional electronic-structure calculation is performed with spin-orbit interaction included. Maximally-localized Wannier functions are then constructed by a post-processing step in order to convert the {it ab-initio} electronic structure around the Fermi level into a tight-binding-like form. Working in the Wannier representation, the Brillouin zone is sampled on a large number of equally spaced parallel slices oriented normal to the total magnetization. On each slice, we find the intersections of the Fermi-surface sheets with the slice by standard contour methods, organize these into a set of closed loops, and compute the Berry phases of the Bloch states as they are transported around these loops. The anomalous Hall conductivity is proportional to the sum of the Berry phases of all the loops on all the slices. Illustrative calculations are performed for Fe, Co and Ni.
The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO
It is known that the Shubnikov--de Haas oscillations can be observed in the Hall resistivity, although their amplitude is much weaker than the amplitude of the diagonal resistivity oscillations. Employing a model of two-dimensional massive Dirac ferm
Itinerant ferromagnets constitute an important class of materials wherein spin-polarization can affect the electric transport properties in nontrivial ways. One such phenomenon is anomalous Hall effect which depends on the details of the band structu
The nontrivial band structure of semimetals has attracted substantial research attention in condensed matter physics and materials science in recent years owing to its intriguing physical properties. Within this class, a group of non-trivial material
A short review paper for the quantum anomalous Hall effect. A substantially extended one is published as Adv. Phys. 64, 227 (2015).