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The effects of inserting impurity $delta$-layers of various elements into a Co/IrMn exchange biased bilayer, at both the interface, and at given points within the IrMn layer a distance from the interface, has been investigated. Depending on the chemical species of dopant, and its position, we found that the exchange biasing can be either strongly enhanced or suppressed. We show that biasing is enhanced with a dusting of certain magnetic impurities, present at either at the interface or sufficiently far away from the Co/IrMn interface. This illustrates that the final spin structure at the Co/IrMn interface is not only governed by interface structure/roughness but is also mediated by local exchange or anisotropy variations within the bulk of the IrMn.
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accom
The properties of the archetypal Co/Cu giant magnetoresistance (GMR) spin-valve structure have been modified by the insertion of very thin (sub-monolayer) $delta$-layers of various elements at different points within the Co layers, and at the Co/Cu i
We have calculated the exchange-energy contribution to the total energy of quasi-two-dimensional hole systems realized by a hard-wall quantum-well confinement of valence-band states in typical semiconductors. The magnitude of the exchange energy turn
Following the recent isolation of monolayer CrI3, there has been a surge of new two-dimensional van der Waals magnetic materials, whose incorporation in van der Waals heterostructures offers a new platform for spintronics, proximity magnetism, and qu
We report modifications to the optical properties of fluorophores in the vicinity of noble metal nanotips. The fluorescence from small clusters of quantum dots has been imaged using an apertureless scanning near-field optical microscope. When a sharp