اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدChange in the room temperature magnetic property of ZnO upon Mn doping
103
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present in this paper the changes in the room temperature magnetic property of ZnO on Mn doping prepared using solvo-thermal process. The zero field cooled (ZFC) and field cooled (FC) magnetisation of undoped ZnO showed bifurcation and magnetic hysteresis at room temperature. Upon Mn doping the magnetic hysteresis at room temperature and the bifurcation in ZFC-FC magnetization vanishes. The results seem to indicate that undoped ZnO is ferromagnetic while on the other hand the Mn doped ZnO is not a ferromagnetic system. We observe that on addition of Mn atoms the system shows antiferromagnetism with very giant magnetic moments.
قيم البحث
اقرأ أيضاً
The layered 5d transition metal oxide Sr2IrO4 has been shown to host a novel Jeff=1/2 Mott spin orbit insulating state with antiferromagnetic ordering, leading to comparisons with the layered cuprates. Here we study the effect of substituting Mn for
Ir in single crystals of Sr2Ir0.9Mn0.1O4 through an investigation involving bulk measurements and resonant x-ray and neutron scattering. We observe a new long range magnetic structure emerge upon doping through a reordering of the spins from the basal plane to the c-axis with a reduced ordering temperature compared to Sr2IrO4. The strong enhancement of the magnetic x-ray scattering intensity at the L3 edge relative to the L2 edge indicates that the Jeff=1/2 state is robust and capable of hosting a variety of ground states.
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has b
een observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.
We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $mu_B$ per carbon. The theoretical prediction was
confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films ($1.5 - 3.0 mu_B$ per carbon) is in agreement with the theoretical prediction. The magnetism is due to bonding coupling between Zn ions and doped C atoms. Results of magneto-resistance and abnormal Hall effect show that the doped films are $n$-type semiconductors with intrinsic ferromagnetism. The carbon doped ZnO could be a promising room temperature dilute magnetic semiconductor (DMS) and our work demonstrates possiblity of produing DMS with non-metal doping.
In conventional BCS superconductors, the electronic kinetic energy increases upon superfluid condensation (the change DEkin is positive). Here we show that in the high critical temperature superconductor Bi-2212, DEkin crosses over from a fully compa
tible conventional BCS behavior (DEkin>0) to an unconventional behavior (DEkin<0) as the free carrier density decreases. If a single mechanism is responsible for superconductivity across the whole phase diagram of high critical temperature superconductors, this mechanism should allow for a smooth transition between such two regimes around optimal doping.
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in as-grown sampl
es. All samples studied exhibited ferromagnetism with temperature dependent hysteresis loops in the magnetization accompanied by metallic p-type conductivity with a strong anomalous Hall effect (AHE) up to 400 K (limited by the experimental setup). The anomalous Hall effect shows hysteresis loops at low temperatures and above room temperature very similar to those seen in the magnetization. The strong AHE with hysteresis indicates that the holes interact with the Mn spins above room temperature. All samples are metallic, which is important for spintronics applications. * To whom correspondence should be addressed. E-mail: [email protected]
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
