Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in as-grown samples. All samples studied exhibited ferromagnetism with temperature dependent hysteresis loops in the magnetization accompanied by metallic p-type conductivity with a strong anomalous Hall effect (AHE) up to 400 K (limited by the experimental setup). The anomalous Hall effect shows hysteresis loops at low temperatures and above room temperature very similar to those seen in the magnetization. The strong AHE with hysteresis indicates that the holes interact with the Mn spins above room temperature. All samples are metallic, which is important for spintronics applications. * To whom correspondence should be addressed. E-mail: [email protected]
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has b
een observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.
The magnetic properties of dilute magnetic semiconductors (DMS) are calculated from first-principles by mapping the ab initio results on a classical Heisenberg model. It is found that the range of the exchange interaction in (Ga, Mn)N is very short r
anged due to the exponential decay of the impurity wave function in the gap. Curie temperatures (Tc) of DMS are calculated by using the Monte Carlo method. It is found that the Tc values of (Ga, Mn)N are very low since, due to the short ranged interaction, percolation of the ferromagnetic coupling is difficult to achieve for small concentrations.
In recent experiments, high Curie temperatures Tc above room temperature were reported in ferromagnetic semiconductors Fe-doped GaSb and InSb, while low Tc between 20 K to 90 K were observed in some other semiconductors with the same crystal structur
e, including Fe-doped InAs and Mn-doped GaSb, InSb, and InAs. Here we study systematically the origin of high temperature ferromagnetism in Fe, Mn, Cr-doped GaSb, InSb, and InAs magnetic semiconductors by combining the methods of density functional theory and quantum Monte Carlo. In the diluted impurity limit, the calculations show that the impurities Fe, Mn, and Cr have similar magnetic correlations in the same semiconductors. Our results suggest that high (low) Tc obtained in these experiments mainly comes from high (low) impurity concentrations. In addition, our calculations predict the ferromagnetic semiconductors of Cr-doped InSb, InAs, and GaSb that may have possibly high Tc. Our results show that the origin of high Tc in (Ga,Fe)Sb and (In,Fe)Sb is not due to the carrier induced mechanism because Fe3+ does not introduce carriers.
We prove a spontaneous magnetization of the oxygen-terminated ZnO (0001) surface by utilizing a multi-code, SIESTA and KKR, first-principles approach, involving both LSDA+U and selfinteraction corrections (SIC) to treat electron correlation effects.
Critical temperatures are estimated from Monte Carlo simulations, showing that at and above 300 K the surface is thermodynamically stable and ferromagnetic. The observed half-metallicity and long-range magnetic order originate from the presence of p-holes in the valence band of the oxide. The mechanism is universal in ionic oxides and points to a new route for the design of ferromagnetic low dimensional systems.
Ab initio studies have theoretically predicted room temperature ferromagnetism in crystalline SnO2, ZrO2 and TiO2 doped with non magnetic element from the 1A column as K and Na. Our purpose is to address experimentally the possibility of magnetism in
both Sn1-xKxO2 and Sn1-xCaxO2 compounds. The samples have been prepared using equilibrium methods of standard solid state route. Our study has shown that both Sn1-xCaxO2 and Sn1-xKxO2 structure is thermodynamically unstable and leads to a phase separation, as shown by X-ray diffraction and detailed micro-structural analyses with high resolution transmission electron microscopy (TEM). In particular, the crystalline SnO2 grains are surrounded by K-based amorphous phase. In contrast to Ca: SnO2 samples we have obtained a magnetic phase in K: SnO2 ones, but no long range ferromagnetic order. The K: SnO2 samples exhibit a moments of the order of 0.2 {mu}B/K /ion, in contrast to ab-initio calculations which predict 3{mu}B, where K atoms are on the Sn crystallographic site. The apparent contradictions between our experiments and first principle studies are discussed.