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Reflectance, transmittance and absorbance of a symmetric light pulse, the carrying frequency of which is close to the frequency of interband transitions in a quantum well, are calculated. Energy levels of the quantum well are assumed discrete, and two closely located excited levels are taken into account. A wide quantum well (the width of which is comparable to the length of the light wave, corresponding to the pulse carrying frequency) is considered, and the dependance of the interband matrix element of the momentum operator on the light wave vector is taken into account. Refractive indices of barriers and quantum well are assumed equal each other. The problem is solved for an arbitrary ratio of radiative and nonradiative lifetimes of electronic excitations. It is shown that the spatial dispersion essentially affects the shapes of reflected and transmitted pulses. The largest changes occur when the radiative broadening is close to the difference of frequencies of interband transitions taken into account.
Reflectance, transmittance and absorbance of a symmetric light pulse, the carrying frequency of which is close to the frequency of interband transitions in a quantum well, are calculated. Energy levels of the quantum well are assumed discrete, and tw
Light reflection and absorption spectra by a semiconductor quantum well (QW) , which width is comparable to a light wave length of stimulating radiation, are calculated. A resonance with two close located exited levels is considered. These levels can
We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark ga
The influence of e-h scattering on the conductivity and magnetotransport of 2D semimetallic HgTe is studied both theoretically and experimentally. The presence of e-h scattering leads to the friction between electron and holes resulting in a large te
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the we