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تسجيل مستخدم جديدMechanism of enhancement of electromagnetic properties of MgB2 by nano-SiC doping
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A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size and nanoinclusions induced by C incorporation and low temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
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Superconducting MgB2 strands with nanometer-scale SiC additions have been investigated systematically using transport and magnetic measurements. A comparative study of MgB2 strands with different nano-SiC addition levels has shown C-doping-enhanced c
ritical current density Jc through enhancements in the upper critical field, Hc2, and decreased anisotropy. The critical current density and flux pinning force density obtained from magnetic measurements were found to greatly differ from the values obtained through transport measurements, particularly with regards to magnetic field dependence. The differences in magnetic and transport results are largely attributed to connectivity related effects. On the other hand, based on the scaling behavior of flux pinning force, there may be other effective pinning centers in MgB2 strands in addition to grain boundary pinning.
Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-elemen
t doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
Iron is an important sheath material for fabrication of MgB2 wires. However, the effect of Fe doping on the superconducting properties of MgB2 remains controversial. In this work, we present results of nano-scale Fe particle doping in to MgB2. The Fe
doping experiments were performed using both bulk and thin film form. It was found that Fe doping did not affect the lattice parameters of MgB2, as evidenced by the lack of change in the XRD peak positions for MgB2. Because of the high reactivity of nano-scale Fe particles, Fe doping is largely in the form of FeB at low doping level while Fe2B was detected at 10wt% doping by both XRD and TEM. There is no evidence for Fe substitution for Mg. The transition temperature decreased modestly with increasing Fe doping levels. The Jc(H) performance was severely depressed at above 3wt% doping level. The detrimental effect of nano-scale Fe doping on both Tc and Jc(H) is attributable to the grain decoupling as a result of magnetic scattering of Fe-containing dopants at grain boundaries.
Polycrystalline MgB2-xCx samples with x=0.05, 0.1, 0.2, 0.3, 0.4 nano-particle carbon powder were prepared using an in-situ reaction method under well controlled conditions to limit the extent of C substitution. The phases, lattice parameters, micros
tructures, superconductivity and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was found that both the a-axis lattice parameter and the Tc decreased monotonically with increasing doping level. For the sample doped with the highest nominal composition of x=0.4 the Tc dropped only 2.7K. The nano-C-doped samples showed an improved field dependence of the Jc compared with the undoped sample over a wide temperature range. The enhancement by C-doping is similar to that of Si-doping but not as strong as for nano-SiC doped MgB2. X-ray diffraction results indicate that C reacted with Mg to form nano-size Mg2C3 and MgB2C2 particles. Nano-particle inclusions and substitution, both observed by transmission electron microscopy, are proposed to be responsible for the enhancement of flux pinning in high fields.
Measurements of the critical current density (Jc) by magnetization and the upper critical field (Hc2) by magnetoresistance have been performed for hafnium-doped MgB2. There has been a remarkable enhancement of Jc as compared to that by ion irradiatio
n without any appreciable decrease in Tc, which is beneficial from the point of view of applications. The irreversibility line extracted from Jc shows an upward shift. In addition, there has been an increase in the upper critical field which indicates that Hf partially substitutes for Mg. Hyperfine interaction parameters obtained from time differential perturbed angular correlation (TDPAC) measurements revealed the formation of HfB and HfB2 phases along with the substitution of Hf. A possible explanation is given for the role of these species in the enhancement of Jc in MgB2 superconductor.
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