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تسجيل مستخدم جديدDoping Effect and Flux Pinning Mechanism of Nano-SiC Additions in MgB2 Strands
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Superconducting MgB2 strands with nanometer-scale SiC additions have been investigated systematically using transport and magnetic measurements. A comparative study of MgB2 strands with different nano-SiC addition levels has shown C-doping-enhanced critical current density Jc through enhancements in the upper critical field, Hc2, and decreased anisotropy. The critical current density and flux pinning force density obtained from magnetic measurements were found to greatly differ from the values obtained through transport measurements, particularly with regards to magnetic field dependence. The differences in magnetic and transport results are largely attributed to connectivity related effects. On the other hand, based on the scaling behavior of flux pinning force, there may be other effective pinning centers in MgB2 strands in addition to grain boundary pinning.
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Polycrystalline MgB2-xCx samples with x=0.05, 0.1, 0.2, 0.3, 0.4 nano-particle carbon powder were prepared using an in-situ reaction method under well controlled conditions to limit the extent of C substitution. The phases, lattice parameters, micros
tructures, superconductivity and flux pinning were characterized by XRD, TEM, and magnetic measurements. It was found that both the a-axis lattice parameter and the Tc decreased monotonically with increasing doping level. For the sample doped with the highest nominal composition of x=0.4 the Tc dropped only 2.7K. The nano-C-doped samples showed an improved field dependence of the Jc compared with the undoped sample over a wide temperature range. The enhancement by C-doping is similar to that of Si-doping but not as strong as for nano-SiC doped MgB2. X-ray diffraction results indicate that C reacted with Mg to form nano-size Mg2C3 and MgB2C2 particles. Nano-particle inclusions and substitution, both observed by transmission electron microscopy, are proposed to be responsible for the enhancement of flux pinning in high fields.
The synthesis and characterization of PVA (Poly Vinyl Acetate) doped bulk MgB2 superconductor is reported here. PVA is used as a Carbon source. PVA doping effects made two distinguishable contributions: first enhancement of Jc field performance and s
econd an increase in Hc2 value, both because of carbon incorporation into MgB2 crystal lattice. The susceptibility measurement reveals that Tc decreased from 37 to 36 K. Lattice parameter a decreased from 3.085 A to 3.081 A due to the partial substitution of Carbon at Boron site. PVA doped sample exhibited the Jc values greater than 10^5 A/cm2 at 5 & 10 K at low fields; which is almost 3 times higher than the pure one, while at high fields the Jc is increased by an order of magnitude in comparison to pure MgB2. From R(T)H measurements we found higher Tc values under magnetic field for doped sample; indicating an increase in Hc2. Also the magnetization measurements exhibited a significant enhancement in Hirr value. The improved performance of PVA doped MgB2 can be attributed to the substitution of carbon at boron site in parent MgB2 and the resulting impact on the carrier density and impurity scattering. The improved flux pinning behavior could easily be seen from reduced flux pinning force plots.
A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size and
nanoinclusions induced by C incorporation and low temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-elemen
t doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
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