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The conductance profiles of magnetic transition metal atoms, such as Fe, Co and Mn, deposited on surfaces and probed by a scanning tunneling microscope (STM), provide detailed information on the magnetic excitations of such nano-magnets. In general the profiles are symmetric with respect to the applied bias. However a set of recent experiments has shown evidence for inherent asymmetries when either a normal or a spin-polarized STM tip is used. In order to explain such asymmetries here we expand our previously developed perturbative approach to electron-spin scattering to the spin- polarized case and to the inclusion of out of equilibrium spin populations. In the case of a magnetic STM tip we demonstrate that the asymmetries are driven by the non-equilibrium occupation of the various atomic spin-levels, an effect that reminds closely that electron spin-transfer. In contrast when the tip is not spin-polarized such non-equilibrium population cannot be build up. In this circumstance we propose that the asymmetry simply originates from the transition metal ion density of state, which is included here as a non-vanishing real component to the spin-scattering self-energy.
In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning t
Pseudospin, an additional degree of freedom related to the honeycomb structure of graphene, is responsible of many of the outstanding electronic properties found in this material. This article provides a clear understanding of how such pseudospin imp
Tunneling magnetoresistance (TMR) in a vertical manganite junction was investigated by low-temperature scanning laser microscopy (LTSLM) allowing to determine the local relative magnetization M orientation of the two electrodes as a function of magni
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth
Nanoscale 3D surface modifications, by scanning tunneling microscopy under ambient conditions, of La0.7Sr0.3MnO3 thin films have been performed. It was demonstrated that there are well defined combinations of bias voltages and scan speeds which allow