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We report specific heat and thermal conductivity of gadolinium- and yttrium-doped amorphous silicon thin films measured using silicon-nitride membrane-based microcalorimeters. Addition of gadolinium or yttrium to the amorphous silicon network reduces the thermal conductivity over a wide temperature range while significantly increasing the specific heat. This result indicates that a large number of non-propagating states are added to the vibrational spectrum that are most likely caused either by localized vibration of the dopant atom in a Si cage, or softening of the material forming the cage structures. High-resolution cross-sectional electron micrographs reveal columnar features in Gd-doped material which do not appear in pure amorphous silicon. Scattering from both the nanoscaled columns and the filled-cage structures play a role in the reduced thermal conductivity in the rare-earth doped amorphous semiconductor. The overall result is an amorphous solid with a large bump in $C/T^{3}$ and no plateau in thermal conductivity.
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory cells with all
We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector ${bf q}$. For this purpose we define the transverse component
In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by over three
The symmetry of local moments plays a defining role in the nature of exotic grounds states stabilized in frustrated magnetic materials. We present inelastic neutron scattering (INS) measurements of the crystal electric field (CEF) excitations in the
We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves