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On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTtau /hbar $ $>1$. It is shown that the metallic behaviour of the resistivity ($drho /dT>0$) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant $F_0^sigma $ which controls the sign of $drho /dT$.
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using elec
We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over
We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin amplification, are utilized in our study. We observe that nonres
We investigate the current-induced spin polarization in the two-dimensional hole gas (2DHG) with the structure inversion asymmetry. By using the perturbation theory, we re-derive the effective $k$-cubic Rashba Hamiltonian for 2DHG and the generalized
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit interaction in