اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدMode selection in InAs quantum dot microdisk lasers using focused ion beam technique
62
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Optically pumped InAs quantum dot microdisk lasers with grooves etched on their surface by a focused ion beam is studied. It is shown that the radial grooves, depending on their length, suppress the lasing of specific radial modes of the microdisk. Total suppression of all radial modes except for the fundamental radial one is also demonstrated. The comparison of laser spectra measured at 78 K before and after ion beam etching for microdisk of 8 $mu$m in diameter shows a six-fold increase of mode spacing, from 2.5 nm to 15.5 nm, without significant decrease of the dominant mode quality factor. Numerical simulations are in good agreement with experimental results.
قيم البحث
اقرأ أيضاً
We report single-mode lasing in subwavelength GaAs disks under optical pumping. The disks are fabricated by standard photolithography and two steps of wet chemical etching. The simple fabrication method can produce submicron disks with good circulari
ty, smooth boundary and vertical sidewalls. The smallest lasing disks have a diameter of 627 nm and thickness of 265 nm. The ratio of the disk diameter to the vacuum lasing wavelength is about 0.7. Our numerical simulations confirm that the lasing modes are whispering-gallery modes with the azimuthal number as small as 4 and very small mode volume.
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control
over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and applications in hybrid devices. Recently, focused ion beam (FIB) systems proved to be useful to engineer several types of spatially-defined emitters with various structural and photophysical properties. Here we systematically explore the physical processes leading to the creation of optically-active defects in hBN using FIB, and find that beam-substrate interaction plays a key role in the formation of defects. These findings are confirmed using transmission electron microscopy that reveals local mechanical deterioration of the hBN layers and local amorphization of ion beam irradiated hBN. Additionally, we show that upon exposure to water, amorphized hBN undergoes a structural and optical transition between two defect types with distinctive emission properties. Moreover, using super-resolution optical microscopy combined with atomic force microscopy, we pinpoint the exact location of emitters within the defect sites, confirming the role of defected edges as primary sources of fluorescent emission. This lays the foundation for FIB-assisted engineering of optically-active defects in hBN with high spatial and spectral control for applications ranging from integrated photonics, to quantum sensing to nanofluidics.
We report on two novel ways for patterning Lithium Niobate (LN) at submicronic scale by means of focused ion beam (FIB) bombardment. The first method consists of direct FIB milling on LiNbO3 and the second one is a combination of FIB milling on a dep
osited metallic layer and subsequent RIE (Reactive Ion Etching) etching. FIB images show in both cases homogeneous structures with well reproduced periodicity. These methods open the way to the fabrication of photonic crystals on LiNbO3 substrates.
Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the pump of a na
rrow-band laser working at 974 nm in erbium-doped lithium niobate microdisk cavity with threshold down to 400 {mu}W and a conversion efficiency of 3.1{times}10^{-4} %, laying the foundation for the LNOI integrated light source research.
Arrays of quantum dot micropillar lasers are an attractive technology platform for various applications in the wider field of nanophotonics. Of particular interest is the potential efficiency enhancement as consequence of cavity quantum electrodynami
cs effects which makes them prime candidates for next generation photonic neurons in neural network hardware. However, in particular for optical pumping their power-conversion efficiency can be very low. Here we perform an in-depth experimental analysis of quantum dot microlasers and investigate their input-output relationship over a wide range of optical pumping conditions. We find that the current energy efficiency limitation is caused by disadvantageous optical pumping concepts and by a low exciton conversion efficiency. Our results indicate that for non-resonant pumping into the GaAs matrix (wetting layer), 3.4% (0.6%) of the optical pump is converted into lasing-relevant excitons, and of those only 2% (0.75%) provide gain to the lasing transition. Based on our findings we propose to improve the pumping efficiency by orders of magnitude by increasing the aluminium content of the AlGaAs/GaAs mirror pairs in the upper Bragg reflector.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
