ﻻ يوجد ملخص باللغة العربية
Measurements of magneto-thermopower (S(H, T)) of interfacial delta doped LaTiO$_3$/SrTiO$_3$ (LTO/STO) heterostructure by an iso-structural antiferromagnetic perovskite LaCrO$_3$ are reported. The thermoelectric power of the pure LTO/STO interface at 300 K is $approx$ 118 $mu$V/K, but increases dramatically on $delta$-doping. The observed linear temperature dependence of S(T) over the temperature range 100 K to 300 K is in agreement with the theory of diffusion thermopower of a two-dimensional electron gas. The S(T) displays a distinct enhancement in the temperature range (T $<$ 100 K) where the sheet resistance shows a Kondo-type minimum. We attributed this maximum in S(T) to Kondo scattering of conduction electron by localized impurity spins at the interface. The suppression of S by a magnetic field, and the isotropic nature of the suppression in out-of-plane and in-plane field geometries further strengthen the Kondo model based interpretation of S(H, T).
In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO$_3$ have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited experimental under
We study a model SrTiO$_3$ interface in which conduction $t_{2g}$ electrons couple to the ferroelectric (FE) phonon mode. We treat the FE mode within a self-consistent phonon theory that captures its quantum critical behavior, and show that proximity
We report the effect of oxygen pressure during growth ($P_{O_{2}}$) on the electronic and magnetic properties of PrAlO$_3$ films grown on $rm TiO_{2}$-terminated SrTiO$_3$ substrates. Resistivity measurements show an increase in the sheet resistance
Almost all oxide two-dimensional electron gases are formed in SrTiO$_3$-based heterostructures and the study of non-SrTiO$_3$ systems is extremely rare. Here, we report the realization of a two-dimensional electron gas in a CaTiO$_3$-based heterostru
Multiple experiments have observed a sharp transition in the band structure of LaAlO$_3$/SrTiO$_3$ (001) interfaces as a function of applied gate voltage. This Lifshitz transition, between a single occupied band at low electron density and multiple o