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We consider a voltage-biased Normal metal-Insulator-Superconductor (NIS) tunnel junction, connected to a high-temperature external electromagnetic environment. This model system features the commonly observed subgap leakage current in NIS junctions through photon-assisted tunneling which is detrimental for applications. We first consider a NIS junction directly coupled to the environment and analyze the subgap leakage current both analytically and numerically; we discuss the link with the phenomenological Dynes parameter. Then we focus on a circuit where a low-temperature lossy transmission line is inserted between the NIS junction and the environment. We show that the subgap leakage current is exponentially suppressed as the length, $ell$, and the resistance per unit length, $R_0$, of the line are increased. We finally discuss our results in view of the performance of NIS junctions in applications.
We present evidence for the cooling of normal metal phonons by electron tunneling in a Superconductor - Normal metal - Superconductor tunnel junction. The normal metal electron temperature is extracted by comparing the device current-voltage characte
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