Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material
by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. In contrast, dislocations in other well-studied 2D materials are typically non-magnetic. GBs composed of pentagon-heptagon pairs interact ferromagnetically and transition from semiconductor to half-metal or metal as a function of tilt angle and/or doping level. When the tilt angle exceeds 47{deg} the structural energetics favor square-octagon pairs and the GB becomes an antiferromagnetic semiconductor. These exceptional magnetic properties arise from an interplay of dislocation-induced localized states, doping, and locally unbalanced stoichiometry. Purposeful engineering of topological GBs may be able to convert MX2 into a promising 2D magnetic semiconductor.
We show by systemically experimental investigation that gas-flow-induced voltage in monolayer graphene is more than twenty times of that in bulk graphite. Examination over samples with sheet resistances ranging from 307 to 1600 {Omega}/sq shows that
the induced voltage increase with the resistance and can be further improved by controlling the quality and doping level of graphene. The induced voltage is nearly independent of the substrate materials and can be well explained by the interplay of Bernoullis principle and the carrier density dependent Seebeck coefficient. The results demonstrate that graphene has great potential for flow sensors and energy conversion devices.
Systematic ab initio calculations show that the energy gap of boron nitride (BN) nanoribbons (BNNRs) with zigzag or armchair edges can be significantly reduced by a transverse electric field and completely closed at a critical field which decreases w
ith increasing ribbon width. In addition, a distinct gap modulation in the ribbons with zigzag edges is presented when a reversed electric field is applied. In a weak field, the gap reduction of the BNNRs with zigzag edges originates from the field-induced energy level shifts of the spatially separated edge-states, while the gap reduction of the BNNRs with armchair edges arises from the Stark effect. As the field gets stronger, the energy gaps of both types of the BNNRs gradually close due to the field-induced motion of nearly free electron states. Without the applied fields, the energy gap modulation by varying ribbon width is rather limited.
We report the stability and electronic structures of the boron nitride nanotubes (BNNTs) with diameters below 4 A by semi-empirical quantum mechanical molecular dynamics simulations and ab initio calculations. Among them (3,0), (3,1), (2,2), (4,0), (
4,1) and (3,2) BNNTs can be stable well over room temperature. These small BNNTs become globally stable when encapsulated in a larger BNNT. It is found that the energy gaps and work functions of these small BNNTs are strongly dependent on their chirality and diameters. The small zigzag BNNTs become desirable semiconductors and have peculiar distribution of nearly free electron states due to strong hybridization effect. When such a small BNNT is inserted in a larger one, the energy gap of the formed double-walled BNNT can even be much reduced due to the coupled effect of wall buckling difference and NFE-pi hybridization.
We show by first-principles calculations that the electronic properties of zigzag graphene nanoribbons (Z-GNRs) adsorbed on Si(001) substrate strongly depend on ribbon width and adsorption orientation. Only narrow Z-GNRs with even rows of zigzag chai
ns across their width adsorbed perpendicularly to the Si dimer rows possess an energy gap, while wider Z-GNRs are metallic due to width-dependent interface hybridization. The Z-GNRs can be metastably adsorbed parallel to the Si dimer rows, but show uniform metallic nature independent of ribbon width due to adsorption induced dangling-bond states on the Si surface.
