We assess the reliability of the one-crossing approximation (OCA) approach in quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in the conjunction with DMFT t
o a number of heavy-fermion, actinide, transition metal compounds, and nanoscale systems. However, several recent studies in the framework of impurity models pointed out to serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal-insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behavior is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations for the system away from the particle-hole symmetric case are also presented and discussed.
In this work, we find by means of first principle calculations a new physical mechanism to generate a two dimensional electron gas, namely, the breaking of charge ordering at the surface of a charge ordered semiconductor due to the incomplete oxygen
environment of the surface ions. The emergence of the 2D gas is independent of the presence of oxygen vacancies or polar discontinuities; this is a self-doping effect. This mechanism might apply to many charge ordered systems, in particular, we study the case of BaBiO3(001). In bulk, this material is a prototype of a forbidden valence compound in which the formal metallic Bi4+ state is skipped exhibiting a charge disproportionated Bi3+ - Bi5+ ordered structure. At room temperature, this charge disproportionation together with the breathing distortions gives rise to a Peierls semiconductor with monoclinic crystal structure. At higher temperature (T > 750 K) or upon doping, it turns cubic and metallic. Interestingly, doped BaBiO3 was one of the first non-cuprate high-Tc superconductors discovered. The outer layer of the Bi-terminated simulated surface turns more cubic- like and metallic while the inner layers remain in the insulating monoclinic state. On the other hand, the metallization does not occur for the Ba termination, a fact that makes this system appealing for nanostructuring. Finally, this finding sets another possible route for future exploration: the potential scenario of 2D superconductivity at the BaBiO3 surface.
We perform an electronic structure study for cerium oxide homogeneously-doped with cobalt impurities, focusing on the role played by oxygen vacancies and structural relaxation. By means of full-potential ab-initio methods, we explore the possibility
of ferromagnetism as observed in recent experiments. Our results indicate that oxygen vacancies seem to be crucial for the appearance of a ferromagnetic alignment among Co impurities, obtaining an increasing tendency towards ferromagnetism with growing vacancy concentration. The estimated couplings cannot explain though, the experimentally observed room-temperature ferromagnetism. In this systematic study, we draw relevant conclusions regarding the location of the oxygen vacancies and the magnetic couplings involved. In particular, we find that oxygen vacancies tend to nucleate in the neighborhood of Co impurities and we get a remarkably strong ferromagnetic coupling between Co atoms and the Ce^{3+} neighboring ions. The calculated magnetic moments per cell depend on the degree of reduction which could explain the wide spread in the magnetization values observed in the experiments.
