We investigate a method for entangling two singlet-triplet qubits in adjacent double quantum dots via capacitive interactions. In contrast to prior work, here we focus on a regime with strong interactions between the qubits. The interplay of the inte
raction energy and simultaneous large detunings for both double dots gives rise to the double charge resonant regime, in which the unpolarized (1111) and fully polarized (0202) four-electron states in the absence of interqubit tunneling are near degeneracy, while being energetically well-separated from the partially polarized (0211 and 1102) states. A rapid controlled-phase gate may be realized by combining time evolution in this regime in the presence of intraqubit tunneling and the interqubit Coulomb interaction with refocusing ${pi}$ pulses that swap the singly occupied singlet and triplet states of the two qubits via, e.g., magnetic gradients. We calculate the fidelity of this entangling gate, incorporating models for two types of noise -- charge fluctuations in the single-qubit detunings and charge relaxation within the low-energy subspace via electron-phonon interaction -- and identify parameter regimes that optimize the fidelity. The rates of phonon-induced decay for pairs of GaAs or Si double quantum dots vary with the sizes of the dipolar and quadrupolar contributions and are several orders of magnitude smaller for Si, leading to high theoretical gate fidelities for coupled singlet-triplet qubits in Si dots. We also consider the dependence of the capacitive coupling on the relative orientation of the double dots and find that a linear geometry provides the fastest potential gate.
We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multi-electron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood as the si
mplest manifestation of Ruderman-Kittel-Kasuya-Yosida exchange, and can be manipulated through gate voltage control of level splittings and tunneling amplitudes within the system. This provides both a high degree of tuneability and a means for realizing high-fidelity two-qubit gates between spatially separated spins, yielding an experimentally accessible method of coupling donor electron spins in silicon via a hybrid impurity-dot system.
We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the doubl
e dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning.
We map electron spin dynamics from time to space in quantum wires with spatially uniform and oscillating Rashba spin-orbit coupling. The presence of the spin-orbit interaction introduces pseudo-Zeeman couplings of the electron spins to effective magn
etic fields. We show that by periodically modulating the spin-orbit coupling along the quantum wire axis, it is possible to create the spatial analogue of spin resonance, without the need for any real magnetic fields. The mapping of time-dependent operations onto a spatial axis suggests a new mode for quantum information processing in which gate operations are encoded into the band structure of the material. We describe a realization of such materials within nanowires at the interface of LaAlO3/SrTiO3 heterostructures.
The nature of the exchange coupling variation in an antiferromagnetic spin-1/2 system can be used to tailor its ground-state properties. In particular, dimerized Heisenberg rings containing domain walls have localized states which can serve as flying
spin qubits when the domain walls are moved. We show theoretically that, when two of these rings are coupled, the movement of the domain walls leads to modulation of the effective exchange interaction between the qubits. Appropriately chosen configurations of domain walls can give rise to ferromagnetic effective exchange. We describe how these spin rings may be used as basic building blocks to construct quantum spin systems whose properties are tunable by virtue of the exchange variation within the rings.
