We introduce a two-channel tunneling model to generalize the widely used BTK theory of point-contact conductance between a normal metal contact and superconductor. Tunneling of electrons can occur via localized surface states or directly, resulting i
n a Fano resonance in the differential conductance $G=dI/dV$. We present an analysis of $G$ within the two-channel model when applied to soft point-contacts between normal metallic silver particles and prototypical heavy-fermion superconductors CeCoIn$_5$ and CeRhIn$_5$ at high pressures. In the normal state the Fano line shape of the measured $G$ is well described by a model with two tunneling channels and a large temperature-independent background conductance. In the superconducting state a strongly suppressed Andreev reflection signal is explained by the presence of the background conductance. We report Andreev signal in CeCoIn$_5$ consistent with standard $d_{x^2-y^2}$-wave pairing, assuming an equal mixture of tunneling into [100] and [110] crystallographic interfaces. Whereas in CeRhIn$_5$ at 1.8 and 2.0 GPa the signal is described by a $d_{x^2-y^2}$-wave gap with reduced nodal region, i.e., increased slope of the gap opening on the Fermi surface. A possibility is that the shape of the high-pressure Andreev signal is affected by the proximity of a line of quantum critical points that extends from 1.75 to 2.3 GPa, which is not accounted for in our description of the heavy-fermion superconductor.
In their Letter, Haziot et al. [Phys. Rev. Lett. 110 (2013) 035301] report a novel phenomenon of giant plasticity for hcp Helium-4 quantum crystals. They assert that Helium-4 exhibits mechanical properties not found in classical plasticity theory. Sp
ecifically, they examine high-quality crystals as a function of temperature and applied strain, where the shear modulus reaches a plateau and dissipation becomes close to zero; both quantities are reported to be independent of stress and strain, implying a reversible dissipation process and quantum tunneling. In this Comment, we show that these signatures can be explained with a classical model of thermally activated dislocation glide without the need to invoke quantum tunneling or dissipationless motion. Recently, we proposed a dislocation glide model in solid Helium-4 containing the dissipation contribution in the presence of other dislocations with qualitatively similar behavior [Zhou et al., Philos. Mag. Lett. 92 (2012) 608].
We develop a model for the gliding of dislocations and plasticity in solid He-4. This model takes into account the Peierls barrier, multiplication and interaction of dislocations, as well as classical thermally and mechanically activated processes le
ading to dislocation glide. We specifically examine the dc stress-strain curve and how it is affected by temperature, strain rate, and dislocation density. As a function of temperature and shear strain, we observe plastic deformation and discuss how this may be related to the experimental observation of elastic anomalies in solid hcp He-4 that have been discussed in connection with the possibility of supersolidity or giant plasticity. Our theory gives several predictions for the dc stress strain curves, for example, the yield point and the change in the work-hardening rate and plastic dissipation peak, that can be compared directly to constant strain rate experiments and thus provide bounds on model parameters.
We review the anomalous behavior of solid He-4 at low temperatures with particular attention to the role of structural defects present in solid. The discussion centers around the possible role of two level systems and structural glassy components for
inducing the observed anomalies. We propose that the origin of glassy behavior is due to the dynamics of defects like dislocations formed in He-4. Within the developed framework of glassy components in a solid, we give a summary of the results and predictions for the effects that cover the mechanical, thermodynamic, viscoelastic, and electro-elastic contributions of the glassy response of solid He-4. Our proposed glass model for solid He-4 has several implications: (1) The anomalous properties of He-4 can be accounted for by allowing defects to freeze out at lowest temperatures. The dynamics of solid He-4 is governed by glasslike (glassy) relaxation processes and the distribution of relaxation times varies significantly between different torsional oscillator, shear modulus, and dielectric function experiments. (2) Any defect freeze-out will be accompanied by thermodynamic signatures consistent with entropy contributions from defects. It follows that such entropy contribution is much smaller than the required superfluid fraction, yet it is sufficient to account for excess entropy at lowest temperatures. (3) We predict a Cole-Cole type relation between the real and imaginary part of the response functions for rotational and planar shear that is occurring due to the dynamics of defects. Similar results apply for other response functions. (4) Using the framework of glassy dynamics, we predict low-frequency yet to be measured electro-elastic features in defect rich He-4 crystals. These predictions allow one to directly test the ideas and very presence of glassy contributions in He-4.
The classical motion of gliding dislocation lines in slip planes of crystalline solid helium leads to plastic deformation even at temperatures far below the Debye temperature and can affect elastic properties. In this work we argue that the gliding o
f dislocations and plasticity may be the origin of many observed elastic anomalies in solid He-4, which have been argued to be connected to supersolidity. We present a dislocation motion model that describes the stress-strain $tau$-$epsilon$ curves and work hardening rate $dtau/depsilon$ of a shear experiment performed at constant strain rate $dot{epsilon}$ in solid helium. The calculated $dtau/depsilon$ exhibits strong softening with increasing temperature due to the motion of dislocations, which mimics anomalous softening of the elastic shear modulus $mu$. In the same temperature region the motion of dislocations causes dissipation with a prominent peak.
Several visualization schemes have been developed for imaging materials at the atomic level through atom probe tomography. The main shortcoming of these tools is their inability to parallel process data using multi-core computing units to tackle the
problem of larger data sets. This critically handicaps the ability to make a quantitative interpretation of spatial correlations in chemical composition, since a significant amount of the data is missed during subsequent analysis. In addition, since these visualization tools are not open-source software there is always a problem with developing a common language for the interpretation of data. In this contribution we present results of our work on using an open-source advanced interactive visualization software tool, which overcomes the difficulty of visualizing larger data sets by supporting parallel rendering on a graphical user interface or script user interface and permits quantitative analysis of atom probe tomography data in real time. This advancement allows materials scientists a codesign approach to making, measuring and modeling new and nanostructured materials by providing a direct feedback to the fabrication and designing of samples in real time.
We study localized plasmons at the nanoscale (nano-plasmons) in graphene. The collective excitations of induced charge density modulations in graphene are drastically changed in the vicinity of a single impurity compared to graphenes bulk behavior. T
he dispersion of nano-plasmons depends on the number of electrons and the sign, strength and size of the impurity potential. Due to this rich parameter space the calculated dispersions are intrinsically multidimensional requiring an advanced visualization tool for their efficient analysis, which can be achieved with parallel rendering. To overcome the problem of analyzing thousands of very complex spatial patterns of nano-plasmonic modes, we take a combined visual and quantitative approach to investigate the excitations on the two-dimensional graphene lattice. Our visual and quantitative analysis shows that impurities trigger the formation of localized plasmonic excitations of various symmetries. We visually identify dipolar, quadrupolar and radial modes, and quantify the spatial distributions of induced charges.
We argue that photon counts in a superconducting nanowire single-photon detector (SNSPD) are caused by the transition from a current-biased metastable superconducting state to the normal state. Such a transition is triggered by vortices crossing the
thin film superconducting strip from one edge to another due to the Lorentz force. Detector counts in SNSPDs may be caused by three processes: (a) a single incident photon with energy sufficient to break enough Cooper pairs to create a normal-state belt across the entire width of the strip (direct photon count), (b) thermally induced single-vortex crossing in the absence of photons (dark count), which at high bias currents releases the energy sufficient to trigger the transition to the normal state in a belt across the whole width of the strip, and (c) a single incident photon with insufficient energy to create a normal-state belt but initiating a subsequent single-vortex crossing, which provides the rest of the energy needed to create the normal-state belt (vortex-assisted single photon count). We derive the current dependence of the rate of vortex-assisted photon counts. The resulting photon count rate has a plateau at high currents close to the critical current and drops as a power-law with high exponent at lower currents. While the magnetic field perpendicular to the film plane does not affect the formation of hot spots by photons, it causes the rate of vortex crossings (with or without photons) to increase. We show that by applying a magnetic field one may characterize the energy barrier for vortex crossings and identify the origin of dark counts and vortex-assisted photon counts.
A vortex crossing a thin-film superconducting strip from one edge to the other, perpendicular to the bias current, is the dominant mechanism of dissipation for films of thickness d on the order of the coherence length XI; and of width w much narrower
than the Pearl length LAMBDA >> w >> XI. At high bias currents, I* < I < Ic, the heat released by the crossing of a single vortex suffices to create a belt-like normal-state region across the strip, resulting in a detectable voltage pulse. Here Ic is the critical current at which the energy barrier vanishes for a single vortex crossing. The belt forms along the vortex path and causes a transition of the entire strip into the normal state. We estimate I* to be roughly Ic/3. Further, we argue that such hot vortex crossings are the origin of dark counts in photon detectors, which operate in the regime of metastable superconductivity at currents between I* and Ic. We estimate the rate of vortex crossings and compare it with recent experimental data for dark counts. For currents below I*, i.e., in the stable superconducting but resistive regime, we estimate the amplitude and duration of voltage pulses induced by a single vortex crossing.
We present results for a multichannel tunneling model that describes point-contact spectra between a metallic tip and a superconducting heavy-fermion system. We calculate tunneling spectra both in the normal and superconducting state. In point-contac
t and scanning tunneling spectroscopy many heavy-fermion materials, like CeCoIn5, exhibit an asymmetric differential conductance, dI/dV, combined with a strongly suppressed Andreev reflection signal in the superconducting state. For Andreev reflection to occur a junction has to be in the highly transparent limit. Here we focus on the opposite limit, namely that of low transparency leading to BCS-like dI/dV curves. We discuss the consequences of a multichannel tunneling model for CeCoIn5 assuming itinerant electron bands and localized f electrons.
