The great potential of Dirac electrons for plasmonics and photonics has been readily recognized after their discovery in graphene, followed by applications to smart optical devices. Dirac carriers are also found in topological insulators (TI) --quant
um systems having an insulating gap in the bulk and intrinsic Dirac metallic states at the surface--. Here, we investigate the plasmonic response of ring structures patterned in Bi$_2$Se$_3$ TI films, which we investigate through terahertz (THz) spectroscopy. The rings are observed to exhibit a bonding and an antibonding plasmon modes, which we tune in frequency by varying their diameter. We develop an analytical theory based on the THz conductivity of unpatterned films, which accurately describes the strong plasmon-phonon hybridization and Fano interference experimentally observed as the bonding plasmon is swiped across the promineng 2,THz phonon exhibited by this material. This work opens the road for the investigation of plasmons in topological insulators and for their application in tunable THz devices.
La1.8-xEu0.2SrxCuO4 (LESCO) is the member of the 214 family which exhibits the largest intervals among the structural, charge ordering (CO), magnetic, and superconducting transition temperatures. By using new dc transport measurements and data in the
literature we construct the phase diagram of LESCO between x = 0.8 and 0.20. This phase diagram has been further probed in ac, by measuring the optical conductivity {sigma}1({omega}) of three single crystals with x = 0.11, 0.125, and 0.16 between 10 and 300 K in order to associate the extra-Drude peaks often observed in the 214 family with a given phase. The far-infrared peak we detect in underdoped LESCO is the hardest among them, survives up to room temperature and is associated with charge localization rather than with ordering. At the CO transition for the commensurate doping x = 0.125 instead the extra-Drude peak hardens and a pseudogap opens in {sigma}1({omega}), approximately as wide as the maximum superconducting gap of LSCO.
