Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

Resonant tunnelling and negative differential conductance in graphene transistors

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonant peak in the device characteristics occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance persists up to room temperature and is gate voltage-tuneable due to graphenes unique Dirac-like spectrum. Whereas conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

Resonant control of cold-atom transport through two optical lattices with a constant relative speed

We show theoretically that the dynamics of cold atoms in the lowest energy band of a stationary optical lattice can be transformed and controlled by a second, weaker, periodic potential moving at a constant speed along the axis of the stationary lattice. The atom trajectories exhibit complex behavior, which depends sensitively on the amplitude and speed of the propagating lattice. When the speed and amplitude of the moving potential are low, the atoms are dragged through the static lattice and perform drifting orbits with frequencies an order of magnitude higher than that corresponding to the moving potential. Increasing either the speed or amplitude of the moving lattice induces Bloch-like oscillations within the energy band of the static lattice, which exhibit complex resonances at critical values of the system parameters. In some cases, a very small change in these parameters can reverse the atoms direction of motion. In order to understand these dynamics we present an analytical model, which describes the key features of the atom transport and also accurately predicts the positions of the resonant features in the atoms phase space. The abrupt controllable transitions between dynamical regimes, and the associated set of resonances, provide a mechanism for transporting atoms between precise locations in a lattice: as required for using cold atoms to simulate condensed matter or as a stepping stone to quantum information processing. The system also provides a direct quantum simulator of acoustic waves propagating through semiconductor nanostructures in sound analogs of the optical laser (SASER).