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The effect of surface disorder on electronic systems is particularly interesting for topological phases with surface and edge states. Using exact diagonalization, it has been demonstrated that the surface states of a 3D topological insulator survive strong surface disorder, and simply get pushed to a clean part of the bulk. Here we explore a new method which analytically eliminates the clean bulk, and reduces a $D$-dimensional problem to a Hamiltonian-diagonalization problem within the $(D-1)$-dimensional disordered surface. This dramatic reduction in complexity allows the analysis of significantly bigger systems than is possible with exact diagonalization. We use our method to analyze a 2D topological spin-Hall insulator with non-magnetic and magnetic edge impurities, and we calculate the probability density (or local density of states) of the zero-energy eigenstates as a function of edge-parallel momentum and layer index. Our analysis reveals that the system size needed to reach behavior in the thermodynamic limit increases with disorder. We also compute the edge conductance as a function of disorder strength, and chart a lower bound for the length scale marking the crossover to the thermodynamic limit.
73 - Kun W. Kim , T. Pereg-Barnea , 2013
The goal of this paper is to provide an intuitive and useful tool for analyzing the impurity bound state problem. We develop a semiclassical approach and apply it to an impurity in two dimensional systems with parabolic or Dirac like bands. Our metho d consists of reducing a higher dimensional problem into a sum of one dimensional ones using the two dimensional Green functions as a guide. We then analyze the one dimensional effective systems in the spirit of the wave function matching method as in the standard 1d quantum model. We demonstrate our method on two dimensional models with parabolic and Dirac-like dispersion, with the later specifically relevant to topological insulators.
107 - Kun W. Kim , Israel Klich , 2013
Chiral edge modes of topological insulators and Hall states exhibit non-trivial behavior of conductance in the presence of impurities or additional channels. We will present a simple formula for the conductance through a chiral edge mode coupled to a disordered bulk. For a given coupling matrix between the chiral mode and bulk modes, and a Green function matrix of bulk modes in real space, the renormalized Green function of the chiral mode is expressed in closed form as a ratio of determinants. We demonstrate the usage of the formula in two systems: i) a 1d wire with random onsite impurity potentials for which we found the disorder averaging is made simpler with the formula, and ii) a quantum Hall fluid with impurities in the bulk for which the phase picked up by the chiral mode due to the scattering with the impurities can be conveniently estimated.
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