Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections in the ef
fective metallic regime above the critical density of the so-called two-dimensional metal-insulator transition (2D MIT). The goal is to look for the effect of logarithmic insulating localization correction to the metallic temperature dependence in the 2D conductivity so as to distinguish between the 2D MIT being a true quantum phase transition versus being a finite-temperature crossover. We use the Boltzmann theory of resistivity including the temperature dependent screening effect on charged impurities in the system to fit the data. We analyze weak perpendicluar field magnetoresistance data taken in the vicinity of the transition and show that they are consistent with weak localization behavior in the strongly disordered regime $k_Fellgtrsim1$. Therefore we supplement the Botzmann transport theory with a logarithmic in temperature quantum weak localization correction and analyze the competition of the insulating temperature dependence of this correction with the metallic temperature dependence of the Boltzmann conductivity. Using this minimal theoretical model we find that the logarithmic insulating correction is masked by the metallic temperature dependence of the Botzmann resistivity and therefore the insulating $log T$ behavior may be apparent only at very low temperatures which are often beyond the range of temperatures accessible experimentally. Analyzing the low-$T$ experimental Si MOSFET transport data we identify signatures of the putative insulating behavior at low temperature and density in the effective metallic phase.
We theoretically consider the effect of plasmon collective modes on the frequency-dependent conductivity of graphene in the presence of the random static potential of charged impurities. We develop an equation of motion approach suitable for the rela
tivistic Dirac electrons in graphene that allows analytical high-frequency asymptotic solution in the presence of both disorder and interaction. We show that the presence of the acoustic plasmon pole (i.e. the plasmon frequency vanishing at long wavelengths as the square-root of wavevector) in the inverse dynamical dielectric function of graphene gives rise to a strong variation with frequency of the screening effect of the relativistic electron gas in graphene on the potential of charged impurities. The resulting frequency-dependent impurity scattering rate gives rise to a broad peak in the frequency-dependent graphene optical conductivity with the amplitude and the position of the peak being sensitive to the detailed characteristics of disorder and interaction in the system. This sample (i.e. disorder, elecron density and interaction strength) dependent redistribution of the spectral weight in the frequency-dependent graphene conductivity may have already been experimentally observed in optical measurements.
We analyze the effect of screening provided by the additional graphene layer in double layer graphene heterostructures (DLGs) on transport characteristics of DLG devices in the metallic regime. The effect of gate-tunable charge density in the additio
nal layer is two-fold: it provides screening of the long-range potential of charged defects in the system, and screens out Coulomb interactions between charge carriers. We find that the efficiency of defect charge screening is strongly dependent on the concentration and location of defects within the DLG. In particular, only a moderate suppression of electron-hole puddles around the Dirac point induced by the high concentration of remote impurities in the silicon oxide substrate could be achieved. A stronger effect is found on the elastic relaxation rate due to charged defects resulting in mobility strongly dependent on the electron denisty in the additional layer of DLG. We find that the quantum interference correction to the resistivity of graphene is also strongly affected by screening in DLG. In particular, the dephasing rate is strongly suppressed by the additional screening that supresses the amplitude of electron-electron interaction and reduces the diffusion time that electrons spend in proximity of each other. The latter effect combined with screening of elastic relaxation rates results in a peculiar gate tunable weak-localization magnetoresistance and quantum correction to resistivity. We propose suitable experiments to test our theory and discuss the possible relevance of our results to exisiting data.
We analyze recent data on the complex inductance of dc SQUIDs that show 1/f inductance noise highly correlated with conventional 1/f flux noise. We argue that these data imply a formation of long range order in fractal spin structures. We show that t
hese structures appear naturally in a random system of spins with wide distribution of spin-spin interactions. We perform numerical simulations on the simplest model of this type and show that it exhibits $1/f^{1+zeta}$ magnetization noise with small exponent $zeta$ and reproduces the correlated behavior observed experimentally.
We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons
in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.
