We investigate the mechanical properties of a doubly-clamped, double-layer nanobeam embedded into an electromechanical system. The nanobeam consists of a highly pre-stressed silicon nitride and a superconducting niobium layer. By measuring the mechan
ical displacement spectral density both in the linear and the nonlinear Duffing regime, we determine the pre-stress and the effective Youngs modulus of the nanobeam. An analytical double-layer model quantitatively corroborates the measured values. This suggests that this model can be used to design mechanical multilayer systems for electro- and optomechanical devices, including materials controllable by external parameters such as piezoelectric, magnetrostrictive, or in more general multiferroic materials.
We report the observation of strong coupling between the exchange-coupled spins in gallium-doped yttrium iron garnet and a superconducting coplanar microwave resonator made from Nb. The measured coupling rate of 450 MHz is proportional to the square-
root of the number of exchange-coupled spins and well exceeds the loss rate of 50 MHz of the spin system. This demonstrates that exchange coupled systems are suitable for cavity quantum electrodynamics experiments, while allowing high integration densities due to their extraordinary high spin densities. Our results furthermore show, that experiments with multiple exchange-coupled spin systems interacting via a single resonator are within reach.
We investigate a hybrid structure consisting of $20pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, tu
rning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-
to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.
The electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO$_2$ interface. Using the Carr-Purcell pu
lse sequence, an echo decay with a time constant of $1.7pm0.2 rm{mu s}$ is observed, in good agreement with theoretical modeling of the interaction between donors and paramagnetic interface states. Electrical spin echo tomography thus can be used to study the spin dynamics in realistic spin qubit devices for quantum information processing.
