Mixing Effects in the Crystallization of Supercooled Quantum Binary Liquids

By means of Raman spectroscopy of liquid microjets we have investigated the crystallization process of supercooled quantum liquid mixtures composed of parahydrogen (pH$_2$) diluted with small amounts of up to 5% of either neon or orthodeuterium (oD$_2$), and of oD$_2$ diluted with either Ne or pH$_2$. We show that the introduction of Ne impurities affects the crystallization kinetics in both the pH$_2$-Ne and oD$_2$-Ne mixtures in terms of a significant reduction of the crystal growth rate, similarly to what found in our previous work on supercooled pH$_2$-oD$_2$ liquid mixtures [M. Kuhnel et {it al.}, Phys. Rev. B textbf{89}, 180506(R) (2014)]. Our experimental results, in combination with path-integral simulations of the supercooled liquid mixtures, suggest in particular a correlation between the measured growth rates and the ratio of the effective particle sizes originating from quantum delocalization effects. We further show that the crystalline structure of the mixture is also affected to a large extent by the presence of the Ne impurities, which likely initiate the freezing process through the formation of Ne crystallites.

Observation of crystallization slowdown in supercooled para-hydrogen and ortho-deuterium quantum liquid mixtures

We report a quantitative experimental study of the crystallization kinetics of supercooled quantum liquid mixtures of para-hydrogen (pH$_2$) and ortho-deuterium (oD$_2$) by high spatial resolution Raman spectroscopy of liquid microjets. We show that in a wide range of compositions the crystallization rate of the isotopic mixtures is significantly reduced with respect to that of the pure substances. To clarify this behavior we have performed path-integral simulations of the non-equilibrium pH$_2$-oD$_2$ liquid mixtures, revealing that differences in quantum delocalization between the two isotopic species translate into different effective particle sizes. Our results provide first experimental evidence for crystallization slowdown of quantum origin, offering a benchmark for theoretical studies of quantum behavior in supercooled liquids.

Excitation spectrum in two-dimensional superfluid 4He

In this work we perform an ab-initio study of an ideal two-dimensional sample of 4He atoms, a model for 4He films adsorbed on several kinds of substrates. Starting from a realistic hamiltonian we face the microscopic study of the excitation phonon-roton spectrum of the system at zero temperature. Our approach relies on Path Integral Ground State Monte Carlo projection methods, allowing to evaluate exactly the dynamical density correlation functions in imaginary time, and this gives access to the dynamical structure factor of the system S(q,omega), containing information about the excitation spectrum E(q), resulting in sharp peaks in S(q,omega). The actual evaluation of S(q,omega) requires the inversion of the Laplace transform in ill-posed conditions, which we face via the Genetic Inversion via Falsification of Theories technique. We explore the full density range from the region of spinodal decomposition to the freezing density, i.e. 0.0321 A^-2 - 0.0658 A^-2. In particular we follow the density dependence of the excitation spectrum, focusing on the low wave--vector behavior of E(q), the roton dispersion, the strength of single quasi--particle peak, Z(q), and the static density response function, chi(q). As the density increases, the dispersion E(q) at low wave--vector changes from a super-linear (anomalous dispersion) trend to a sub-linear (normal dispersion) one, anticipating the crystallization of the system; at the same time the maxon-roton structure, which is barely visible at low density, becomes well developed at high densities and the roton wave vector has a strong density dependence. Connection is made with recent inelastic neutron scattering results from highly ordered silica nanopores partially filled with 4He.

Novel substrates for Helium adsorption: Graphane and Graphene-Fluoride

The discovery of fullerenes has stimulated extensive exploration of the resulting behavior of adsorbed films. Our study addresses the planar substrates graphene-fluoride (GF) and graphane (GH) in comparison to graphene. We present initial results concerning the potential energy, energy bands and low density behavior of 4He and 3He films on such different surfaces. For example, while graphene presents an adsorption potential that is qualitatively similar to that on graphite, GF and GH yield potentials with different symmetry, a number of adsorption sites double that on graphene/graphite and a larger corrugation for the adatom. In the case of GF, the lowest energy band width is similar to that on graphite but the He atom has a significantly larger effective mass and the adsorption energy is about three time that on graphite. Implications concerning the monolayer phase diagram of 4He are explored with the exact path integral ground state method. A commensurate ordered state similar to the sqrt{3} x sqrt{3} R30^o state on graphite is found the be unstable both on GF and on GH. The ground states of submonolayer 4He on both GF and GH are superfluids with a Bose Einstein condensate fraction of about 10%.

Study of solid 4He in two dimensions. The issue of zero-point defects and study of confined crystal

Defects are believed to play a fundamental role in the supersolid state of 4He. We report on studies by exact Quantum Monte Carlo (QMC) simulations at zero temperature of the properties of solid 4He in presence of many vacancies, up to 30 in two dimensions (2D). In all studied cases the crystalline order is stable at least as long as the concentration of vacancies is below 2.5%. In the 2D system for a small number, n_v, of vacancies such defects can be identified in the crystalline lattice and are strongly correlated with an attractive interaction. On the contrary when n_v~10 vacancies in the relaxed system disappear and in their place one finds dislocations and a revival of the Bose-Einstein condensation. Thus, should zero-point motion defects be present in solid 4He, such defects would be dislocations and not vacancies, at least in 2D. In order to avoid using periodic boundary conditions we have studied the exact ground state of solid 4He confined in a circular region by an external potential. We find that defects tend to be localized in an interfacial region of width of about 15 A. Our computation allows to put as upper bound limit to zero--point defects the concentration 0.003 in the 2D system close to melting density.

Microscopic studies of solid 4He with Path Integral Projector Monte Carlo

We have investigated the ground state properties of solid $^4$He with the Shadow Path Integral Ground State method. This exact T=0 K projector method allows to describes quantum solids without introducing any a priori equilibrium position. We have found that the efficiency in computing off-diagonal properties in the solid phase sensibly improves when the direct sampling of permutations, in principle not required, is introduced. We have computed the exact one-body density matrix (obdm) in large commensurate 4He crystal finding a decreasing condensate fraction with increasing imaginary time of projection, making our result not conclusive on the presence of Bose-Einstein condensation in bulk solid 4He. We can only give an upper bound of 2.5 times 10^-8 on the condensate fraction. We have exploited the SPIGS method to study also 4He crystal containing grain boundaries by computing the related surface energy and the obdm along these defects. We have found that also highly symmetrical grain boundaries have a finite condensate fraction. We have also derived a route for the estimation of the true equilibrium concentration of vacancies x_v in bulk T=0 K solid 4He, which is shown to be finite, x_v=0.0014(1) at the melting density, when computed with the variational shadow wave function technique.