We study the effect of electron interaction on the spin-splitting and the $g$-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the $g$-factor is enhanced in c
omparison to its free electron value $g=2$ and oscillates as a function of the filling factor $ u $ in the range $2leq g^{ast}lesssim 4$ reaching maxima at even $ u $ and minima at odd $ u $. We outline the role of charged impurities in the substrate, which are shown to suppress the oscillations of the $g^{ast}$-factor. This effect becomes especially pronounced with the increase of the impurity concentration, when the effective $g$-factor becomes independent of the filling factor reaching a value of $g^{ast}approx 2.3$. A relation to the recent experiment is discussed.
We study the effect of electron-electron interaction and spin on electronic and transport properties of gated graphene nanoribbons (GNRs) in a perpendicular magnetic field in the regime of the lowest Landau level (LL). The electron-electron interacti
on is taken into account using the Hartree and Hubbard approximations, and the conductance of GNRs is calculated on the basis of the recursive Greens function technique within the Landauer formalism. We demonstrate that, in comparison to the one-electron picture, electron-electron interaction leads to the drastic changes in the dispersion relation and structure of propagating states in the regime of the lowest LL showing a formation of the compressible strip and opening of additional conductive channels in the middle of the ribbon. We show that the latter are very sensitive to disorder and get scattered even if the concentration of disorder is moderate. In contrast, the edge states transport is very robust and can not be suppressed even in the presence of a strong spin-flipping.
The effects of electron interaction on the magnetoconductance of graphene nanoribbons (GNRs) are studied within the Hartree approximation. We find that a perpendicular magnetic field leads to a suppression instead of an expected improvement of the qu
antization. This suppression is traced back to interaction-induced modifications of the band structure leading to the formation of compressible strips in the middle of GNRs. It is also shown that the hard wall confinement combined with electron interaction generates overlaps between forward and backward propagating states, which may significantly enhance backscattering in realistic GNRs. The relation to available experiments is discussed.
