We investigate charge conductance and spin and valley polarization along with the tunnelling magneto-resistance (TMR) in silicene junctions composed of normal silicene and ferromagnetic silicene. We show distinct features of the conductances for para
llel and anti-parallel spin configurations and the TMR, as the ferromagnetic-normal-ferromagnetic (FNF) junction is tuned by an external electric field. We analyse the behavior of the charge conductance and valley and spin polarizations in terms of the independent conductances of the different spins at the two valleys and the band structure of ferromagnetic silicene and show how the conductances are affected by the vanishing of the propagating states at one or the other valley. In particular, unlike in graphene, the band structure at the two valleys are independently affected by the spin in the ferromagnetic regions and lead to non-zero, and in certain parameter regimes, pure valley and spin polarizations, which can be tuned by the external electric field. We also investigate the oscillatory behavior of the TMR with respect to the strength of the barrier potential (both spin-independent and spin-dependent barriers) in the normal silicene region and note that in some parameter regimes, the TMR can even go from positive to negative values, as a function of the external electric field.
We study the phenomenon of adiabatic quantum charge pumping in systems supporting fractionally charged fermionic bound states, in two different setups. The first quantum pump setup consists of a charge-density-modulated quantum wire, and the second o
ne is based on a semiconducting nanowire with Rashba spin-orbit interaction, in the presence of a spatially oscillating magnetic field. In both these quantum pumps transport is investigated in a N-X-N geometry, with the system of interest (X) connected to two normal-metal leads (N), and the two pumping parameters are the strengths of the effective wire-lead barriers. Pumped charge is calculated within the scattering matrix formalism. We show that quantum pumping in both setups provides a unique signature of the presence of the fractional-fermion bound states, in terms of asymptotically quantized pumped charge. Furthermore, we investigate shot noise arising due to quantum pumping, verifying that quantized pumped charge corresponds to minimal shot noise.
We study theoretically transport through a semiconducting nanowire (NW) in the presence of Rashba spin orbit interaction, uniform magnetic field, and spatially modulated magnetic field. The system is fully gapped, and the interplay between the spin o
rbit interaction and the magnetic fields leads to fractionally charged fermion (FF) bound states of Jackiw-Rebbi type at each end of the nanowire. We investigate the transport and noise behavior of a N/NW/N system, where the wire is contacted by two normal leads (N), and we look for possible signatures that could help in the experimental detection of such states. We find that the differential conductance and the shot noise exhibit a sub-gap structure which fully reveals the presence of the FF state. Our predictions can be tested in standard two-terminal measurements through InSb/InAs nanowires.
