We theoretically investigate the tunneling-induced transparency (TIT) and the Autler-Townes (AT) doublet and triplet in a triple-quantum-dot system. For the resonant tunneling case, we show that the TIT induces a transparency dip in a weak-tunneling
regime and no anticrossing occurs in the eigenenergies of the system Hamiltonian. However, in a strong-tunneling regime, we show that the TIT evolves to the AT splitting, which results in a well-resolved doublet and double anticrossings. For the off-resonance case, we demonstrate that, in the weak-tunneling regime, the double TIT is realized with a new detuning-dependent dip, where the anticrossing is also absent. In the strong-tunneling regime, the AT triplet is realized with triple anticrossings and a wide detuning-dependent transparency window by manipulating one of the energy-level detunings. Our results can be applied to quantum measurement and quantum-optics devices in solid systems.
Realization of robust coherent quantum phase slips represents a significant experimental challenge. Here we propose a new design consisting of multiple nanowire junctions to realize a phase-slip flux qubit. It admits good tunability provided by gate
voltages applied on superconducting islands separating nanowire junctions. In addition, the gates and junctions can be identical or distinct to each other leading to symmetric and asymmetric setups. We find that the asymmetry can improve the performance of the proposed device, compared with the symmetric case. In particular, it can enhance the effective rate of collective quantum phase slips. Furthermore, we demonstrate how to couple two such devices via a mutual inductance. This is potentially useful for quantum gate operations. Our investigation on how symmetry in multiple nanowire junctions affects the device performance should be useful for the application of phase-slip flux qubits in quantum information processing and quantum metrology.
We develop a systematic and efficient approach for numerically solving the non-Markovian quantum state diffusion equations for open quantum systems coupled to an environment up to arbitrary orders of noises or coupling strengths. As an important appl
ication, we consider a real-time simulation of a spin-boson model in a strong coupling regime that is difficult to deal with using conventional methods. We show that the non-Markovian stochastic Schr{o}dinger equation can be efficiently implemented as a real--time simulation for this model, so as to give an accurate description of spin-boson dynamics beyond the rotating-wave approximation.
We propose an approach for probing Majorana bound states (MBSs) in a nanowire via counting statistics of a nearby charge detector in the form of a single-electron transistor (SET). We consider the impacts on the counting statistics by both the local
coupling between the detector and an adjacent MBS at one end of a nanowire and the nonlocal coupling to the MBS at the other end. We show that the Fano factor and the skewness of the SET current are minimized for a symmetric SET configuration in the absence of the MBSs or when coupled to a fermionic state. However, the minimum points of operation are shifted appreciably in the presence of the MBSs to asymmetric SET configurations with a higher tunnel rate at the drain than at the source. This feature persists even when varying the nonlocal coupling and the pairing energy between the two MBSs. We expect that these MBS-induced shifts can be measured experimentally with available technologies and can serve as important signatures of the MBSs.
We propose an approach for achieving ground-state cooling of a nanomechanical resonator (NAMR) capacitively coupled to a triple quantum dot (TQD). This TQD is an electronic analog of a three-level atom in $Lambda$ configuration which allows an electr
on to enter it via lower-energy states and to exit only from a higher-energy state. By tuning the degeneracy of the two lower-energy states in the TQD, an electron can be trapped in a dark state caused by destructive quantum interference between the two tunneling pathways to the higher-energy state. Therefore, ground-state cooling of an NAMR can be achieved when electrons absorb readily and repeatedly energy quanta from the NAMR for excitations.
Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of 2.5V~4.5V corre
sponding to an ON pulse and voltages ~8V corresponding to OFF pulses. Electron microscope imaging of the devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large. The switching rate is strongly temperature dependent, which rules out a purely electromechanical switching mechanism. This observed switching in suspended graphene devices strongly suggests a switching mechanism via atomic movement and/or chemical rearrangement, and underscores the potential of all-carbon devices for integration with graphene electronics.
We propose a current correlation spectrum approach to probe the quantum behaviors of a nanome-chanical resonator (NAMR). The NAMR is coupled to a double quantum dot (DQD), which acts as a quantum transducer and is further coupled to a quantum-point c
ontact (QPC). By measuring the current correlation spectrum of the QPC, shifts in the DQD energy levels, which depend on the phonon occupation in the NAMR, are determined. Quantum behaviors of the NAMR could, thus, be observed. In particular, the cooling of the NAMR into the quantum regime could be examined. In addition, the effects of the coupling strength between the DQD and the NAMR on these energy shifts are studied. We also investigate the impacts on the current correlation spectrum of the QPC due to the backaction from the charge detector on the DQD.
Coupling high quality, suspended atomic membranes to specialized electrodes enables investigation of many novel phenomena, such as spin or Cooper pair transport in these two dimensional systems. However, many electrode materials are not stable in aci
ds that are used to dissolve underlying substrates. Here we present a versatile and powerful multi-level lithographical technique to suspend atomic membranes, which can be applied to the vast majority of substrate, membrane and electrode materials. Using this technique, we fabricated suspended graphene devices with Al electrodes and mobility of 5500 cm^2/Vs. We also demonstrate, for the first time, fabrication and measurement of a free-standing thin Bi2Se3 membrane, which has low contact resistance to electrodes and a mobility of >~500 cm^2/Vs.
We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we observe conductance minima at all integer filling factors nu between 0 and
-8, as well as a small plateau at { u}=1/3. For trilayer devices, we observe features at nu=-1, -2, -3 and -4, and at { u}~0.5 that persist to 4.5K at B=8T. All of these features persist for all accessible values of Vg and B, and could suggest the onset of symmetry breaking of the first few Landau (LL) levels and fractional quantum Hall states.
