We have used ion-irradiation to damage the (001) surfaces of SmB_6 single crystals to varying depths, and have measured the resistivity as a function of temperature for each depth of damage. We observe a reduction in the residual resistivity with inc
reasing depth of damage. Our data are consistent with a model in which the surface state is not destroyed by the ion-irradiation, but instead the damaged layer is poorly conducting and the initial surface state is reconstructed below the damage. This behavior is consistent with a surface state that is topologically protected.
We report the synthesis of EuPtIn$_{4}$ single crystalline platelets by the In-flux technique. This compound crystallizes in the orthorhombic Cmcm structure with lattice parameters $a=4.542(1)$ AA, $b=16.955(2)$ AA$,$ and $c=7.389(1)$ AA. Measurement
s of magnetic susceptibility, heat capacity, electrical resistivity, and electron spin resonance (ESR) reveal that EuPtIn$_{4}$ is a metallic Curie-Weiss paramagnet at high temperatures and presents antiferromagnetic (AFM) ordering below $T_{N}=13.3$ K. In addition, we observe a successive anomaly at $T^{*} = 12.6$ K and a spin-flop transition at $H_{c} sim 2.5$ T applied along the $ac$-plane. In the paramagnetic state, a single Eu$^{2+}$ Dysonian ESR line with a Korringa relaxation rate of $b = 4.1(2)$ Oe/K is observed. Interestingly, even at high temperatures, both ESR linewidth and electrical resistivity reveal a similar anisotropy. We discuss a possible common microscopic origin for the observed anisotropy in these physical quantities likely associated with an anisotropic magnetic interaction between Eu$^{2+}$ 4$f$ electrons mediated by conduction electrons.
